Red to blue wavelength emission of N-polar (0001¯) InGaN light-emitting diodes grown by metalorganic vapor phase epitaxy

Kanako Shojiki; Tomoyuki Tanikawa; Jung Hun Choi; Shigeyuki Kuboya; Takashi Hanada; Ryuji Katayama; Takashi Matsuoka

doi:10.7567/APEX.8.061005

Red to blue wavelength emission of N-polar (0001¯) InGaN light-emitting diodes grown by metalorganic vapor phase epitaxy

Kanako Shojiki, Tomoyuki Tanikawa, Jung Hun Choi, Shigeyuki Kuboya, Takashi Hanada, Ryuji Katayama, Takashi Matsuoka

Research output: Contribution to journal › Article › peer-review

47 Citations (Scopus)

Abstract

N-polar (0001¯) (-c-plane) InGaN light-emitting diodes with emission wavelengths ranging from blue to green to red were fabricated on a c-plane sapphire substrate by metalorganic vapor phase epitaxy. The optimization of growth conditions for -c-plane InGaN/GaN multiple quantum wells was performed. As a result, the extension of the emission wavelength from 444 to 633nm under a constant current of 20mA was achieved by changing the growth temperature of quantum wells from 880 to 790 °C.

Original language	English
Article number	061005
Journal	Applied Physics Express
Volume	8
Issue number	6
DOIs	https://doi.org/10.7567/APEX.8.061005
Publication status	Published - 2015 Jun 1

Access to Document

10.7567/APEX.8.061005

Cite this

@article{633165066cce4f61ac7878356b3a3e21,

title = "Red to blue wavelength emission of N-polar (0001¯) InGaN light-emitting diodes grown by metalorganic vapor phase epitaxy",

abstract = "N-polar (0001¯) (-c-plane) InGaN light-emitting diodes with emission wavelengths ranging from blue to green to red were fabricated on a c-plane sapphire substrate by metalorganic vapor phase epitaxy. The optimization of growth conditions for -c-plane InGaN/GaN multiple quantum wells was performed. As a result, the extension of the emission wavelength from 444 to 633nm under a constant current of 20mA was achieved by changing the growth temperature of quantum wells from 880 to 790 °C.",

author = "Kanako Shojiki and Tomoyuki Tanikawa and Choi, {Jung Hun} and Shigeyuki Kuboya and Takashi Hanada and Ryuji Katayama and Takashi Matsuoka",

note = "Publisher Copyright: {\textcopyright} 2015 The Japan Society of Applied Physics.",

year = "2015",

month = jun,

day = "1",

doi = "10.7567/APEX.8.061005",

language = "English",

volume = "8",

journal = "Applied Physics Express",

issn = "1882-0778",

publisher = "Japan Society of Applied Physics",

number = "6",

}

TY - JOUR

T1 - Red to blue wavelength emission of N-polar (0001¯) InGaN light-emitting diodes grown by metalorganic vapor phase epitaxy

AU - Shojiki, Kanako

AU - Tanikawa, Tomoyuki

AU - Choi, Jung Hun

AU - Kuboya, Shigeyuki

AU - Hanada, Takashi

AU - Katayama, Ryuji

AU - Matsuoka, Takashi

PY - 2015/6/1

Y1 - 2015/6/1

N2 - N-polar (0001¯) (-c-plane) InGaN light-emitting diodes with emission wavelengths ranging from blue to green to red were fabricated on a c-plane sapphire substrate by metalorganic vapor phase epitaxy. The optimization of growth conditions for -c-plane InGaN/GaN multiple quantum wells was performed. As a result, the extension of the emission wavelength from 444 to 633nm under a constant current of 20mA was achieved by changing the growth temperature of quantum wells from 880 to 790 °C.

AB - N-polar (0001¯) (-c-plane) InGaN light-emitting diodes with emission wavelengths ranging from blue to green to red were fabricated on a c-plane sapphire substrate by metalorganic vapor phase epitaxy. The optimization of growth conditions for -c-plane InGaN/GaN multiple quantum wells was performed. As a result, the extension of the emission wavelength from 444 to 633nm under a constant current of 20mA was achieved by changing the growth temperature of quantum wells from 880 to 790 °C.

UR - http://www.scopus.com/inward/record.url?scp=84930689195&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84930689195&partnerID=8YFLogxK

U2 - 10.7567/APEX.8.061005

DO - 10.7567/APEX.8.061005

M3 - Article

AN - SCOPUS:84930689195

SN - 1882-0778

VL - 8

JO - Applied Physics Express

JF - Applied Physics Express

IS - 6

M1 - 061005

ER -

Red to blue wavelength emission of N-polar (0001¯) InGaN light-emitting diodes grown by metalorganic vapor phase epitaxy

Abstract

Access to Document

Other files and links

Fingerprint

Cite this