TY - JOUR
T1 - Reduced poly-Si TFT threshold voltage instability by high-temperature hydrogenation of a-Si-like spin centers
AU - Kamigaki, Yoshiaki
AU - Hashimoto, Takashi
AU - Aoki, Masaaki
AU - Yokogawa, Ken'etsu
AU - Moniwa, Masahiro
AU - Iijima, Sinpei
AU - Minami, Masataka
AU - Ishida, Hiroshi
AU - Okuhira, Hidekazu
AU - Aoki, Sigeru
AU - Yamanaka, Toshiaki
PY - 1995/1/1
Y1 - 1995/1/1
N2 - New findings of this work are as follows: a-Si-like spin centers (·Si≡Si3) are found to exist in CVD-SiO2 gate dielectric films as well as poly-Si substrate films. High-temperature hydrogenation (HTH) at 850 °C is effective in terminating these spin centers and in reducing the poly-Si PMOS TFT threshold voltage instability.
AB - New findings of this work are as follows: a-Si-like spin centers (·Si≡Si3) are found to exist in CVD-SiO2 gate dielectric films as well as poly-Si substrate films. High-temperature hydrogenation (HTH) at 850 °C is effective in terminating these spin centers and in reducing the poly-Si PMOS TFT threshold voltage instability.
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U2 - 10.1109/relphy.1995.513646
DO - 10.1109/relphy.1995.513646
M3 - Conference article
AN - SCOPUS:0029233243
SN - 0099-9512
SP - 12
EP - 17
JO - Annual Proceedings - Reliability Physics (Symposium)
JF - Annual Proceedings - Reliability Physics (Symposium)
T2 - Proceedings of the 33rd Annual 1995 IEEE International Reliability Physics Proceedings
Y2 - 4 April 1995 through 6 April 1995
ER -