Reducing contact resistance in ferroelectric organic transistors by buffering the semiconductor/dielectric interface

Huabin Sun; Yao Yin; Qijing Wang; Qian Jun; Yu Wang; Kazuhito Tsukagoshi; Xizhang Wang; Zheng Hu; Lijia Pan; Youdou Zheng; Yi Shi; Yun Li

doi:10.1063/1.4928534

Reducing contact resistance in ferroelectric organic transistors by buffering the semiconductor/dielectric interface

Huabin Sun, Yao Yin, Qijing Wang, Qian Jun, Yu Wang, Kazuhito Tsukagoshi, Xizhang Wang, Zheng Hu, Lijia Pan, Youdou Zheng, Yi Shi, Yun Li

Research output: Contribution to journal › Article › peer-review

20 Citations (Scopus)

Abstract

The reduction of contact resistance in ferroelectric organic field-effect transistors (Fe-OFETs) by buffering the interfacial polarization fluctuation was reported. An ultrathin poly(methyl methacrylate) layer was inserted between the ferroelectric polymer and organic semiconductor layers. The contact resistance was significantly reduced to 55 kΩ cm. By contrast, Fe-OFETs without buffering exhibited a significantly larger contact resistance of 260 kΩ cm. Results showed that such an enhanced charge injection was attributed to the buffering effect at the semiconductor/ferroelectric interface, which narrowed the trap distribution of the organic semiconductor in the contact region. The presented work provided an efficient method of lowering the contact resistance in Fe-OFETs, which is beneficial for the further development of Fe-OFETs.

Original language	English
Article number	053304
Journal	Applied Physics Letters
Volume	107
Issue number	5
DOIs	https://doi.org/10.1063/1.4928534
Publication status	Published - 2015 Aug 3
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.4928534

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title = "Reducing contact resistance in ferroelectric organic transistors by buffering the semiconductor/dielectric interface",

abstract = "The reduction of contact resistance in ferroelectric organic field-effect transistors (Fe-OFETs) by buffering the interfacial polarization fluctuation was reported. An ultrathin poly(methyl methacrylate) layer was inserted between the ferroelectric polymer and organic semiconductor layers. The contact resistance was significantly reduced to 55 kΩ cm. By contrast, Fe-OFETs without buffering exhibited a significantly larger contact resistance of 260 kΩ cm. Results showed that such an enhanced charge injection was attributed to the buffering effect at the semiconductor/ferroelectric interface, which narrowed the trap distribution of the organic semiconductor in the contact region. The presented work provided an efficient method of lowering the contact resistance in Fe-OFETs, which is beneficial for the further development of Fe-OFETs.",

author = "Huabin Sun and Yao Yin and Qijing Wang and Qian Jun and Yu Wang and Kazuhito Tsukagoshi and Xizhang Wang and Zheng Hu and Lijia Pan and Youdou Zheng and Yi Shi and Yun Li",

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doi = "10.1063/1.4928534",

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T1 - Reducing contact resistance in ferroelectric organic transistors by buffering the semiconductor/dielectric interface

AU - Sun, Huabin

AU - Yin, Yao

AU - Wang, Qijing

AU - Jun, Qian

AU - Wang, Yu

AU - Tsukagoshi, Kazuhito

AU - Wang, Xizhang

AU - Hu, Zheng

AU - Pan, Lijia

AU - Zheng, Youdou

AU - Shi, Yi

AU - Li, Yun

PY - 2015/8/3

Y1 - 2015/8/3

N2 - The reduction of contact resistance in ferroelectric organic field-effect transistors (Fe-OFETs) by buffering the interfacial polarization fluctuation was reported. An ultrathin poly(methyl methacrylate) layer was inserted between the ferroelectric polymer and organic semiconductor layers. The contact resistance was significantly reduced to 55 kΩ cm. By contrast, Fe-OFETs without buffering exhibited a significantly larger contact resistance of 260 kΩ cm. Results showed that such an enhanced charge injection was attributed to the buffering effect at the semiconductor/ferroelectric interface, which narrowed the trap distribution of the organic semiconductor in the contact region. The presented work provided an efficient method of lowering the contact resistance in Fe-OFETs, which is beneficial for the further development of Fe-OFETs.

AB - The reduction of contact resistance in ferroelectric organic field-effect transistors (Fe-OFETs) by buffering the interfacial polarization fluctuation was reported. An ultrathin poly(methyl methacrylate) layer was inserted between the ferroelectric polymer and organic semiconductor layers. The contact resistance was significantly reduced to 55 kΩ cm. By contrast, Fe-OFETs without buffering exhibited a significantly larger contact resistance of 260 kΩ cm. Results showed that such an enhanced charge injection was attributed to the buffering effect at the semiconductor/ferroelectric interface, which narrowed the trap distribution of the organic semiconductor in the contact region. The presented work provided an efficient method of lowering the contact resistance in Fe-OFETs, which is beneficial for the further development of Fe-OFETs.

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JO - Applied Physics Letters

JF - Applied Physics Letters

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M1 - 053304

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Reducing contact resistance in ferroelectric organic transistors by buffering the semiconductor/dielectric interface

Abstract

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