Abstract
The current induced magnetization reversal in nanoscale spin valves is a potential alternative to magnetic field switching in magnetic memories. We show that the critical switching current can be decreased by an order of magnitude by strategically distributing the resistances in the magnetically active region of the spin valve. In addition, we simulate full switching curves and predict a new precessional state.
Original language | English |
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Pages (from-to) | 3250-3252 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 85 |
Issue number | 15 |
DOIs | |
Publication status | Published - 2004 Oct 11 |
Externally published | Yes |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)