Reduction in interfacial recombination velocity by superlattice buffer layers in GaAs/AlGaAs quantum well structures

H. Iwata; H. Yokoyama; M. Sugimoto; N. Hamao; K. Onabe

doi:10.1063/1.101097

Reduction in interfacial recombination velocity by superlattice buffer layers in GaAs/AlGaAs quantum well structures

H. Iwata, H. Yokoyama, M. Sugimoto, N. Hamao, K. Onabe

Research output: Contribution to journal › Article › peer-review

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Abstract

The values of interfacial recombination velocities in GaAs/AlGaAs double heterostructures and quantum wells grown by molecular beam epitaxy with and without superlattice cladding layers are obtained with photoluminescence time-decay measurements. The authors show that superlattice layers reduce the interfacial recombination velocity from 330 cm/s, the value for double heterostructures with alloy cladding layers, to 40 cm/s, and that they have small effect on the GaAs bulk lifetime.

Original language	English
Pages (from-to)	2427-2428
Number of pages	2
Journal	Applied Physics Letters
Volume	54
Issue number	24
DOIs	https://doi.org/10.1063/1.101097
Publication status	Published - 1989
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Reduction in interfacial recombination velocity by superlattice buffer layers in GaAs/AlGaAs quantum well structures",

abstract = "The values of interfacial recombination velocities in GaAs/AlGaAs double heterostructures and quantum wells grown by molecular beam epitaxy with and without superlattice cladding layers are obtained with photoluminescence time-decay measurements. The authors show that superlattice layers reduce the interfacial recombination velocity from 330 cm/s, the value for double heterostructures with alloy cladding layers, to 40 cm/s, and that they have small effect on the GaAs bulk lifetime.",

author = "H. Iwata and H. Yokoyama and M. Sugimoto and N. Hamao and K. Onabe",

year = "1989",

doi = "10.1063/1.101097",

language = "English",

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journal = "Applied Physics Letters",

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publisher = "American Institute of Physics Publising LLC",

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T1 - Reduction in interfacial recombination velocity by superlattice buffer layers in GaAs/AlGaAs quantum well structures

AU - Iwata, H.

AU - Yokoyama, H.

AU - Sugimoto, M.

AU - Hamao, N.

AU - Onabe, K.

PY - 1989

Y1 - 1989

N2 - The values of interfacial recombination velocities in GaAs/AlGaAs double heterostructures and quantum wells grown by molecular beam epitaxy with and without superlattice cladding layers are obtained with photoluminescence time-decay measurements. The authors show that superlattice layers reduce the interfacial recombination velocity from 330 cm/s, the value for double heterostructures with alloy cladding layers, to 40 cm/s, and that they have small effect on the GaAs bulk lifetime.

AB - The values of interfacial recombination velocities in GaAs/AlGaAs double heterostructures and quantum wells grown by molecular beam epitaxy with and without superlattice cladding layers are obtained with photoluminescence time-decay measurements. The authors show that superlattice layers reduce the interfacial recombination velocity from 330 cm/s, the value for double heterostructures with alloy cladding layers, to 40 cm/s, and that they have small effect on the GaAs bulk lifetime.

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 24

ER -

Reduction in interfacial recombination velocity by superlattice buffer layers in GaAs/AlGaAs quantum well structures

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