The values of interfacial recombination velocities in GaAs/AlGaAs double heterostructures and quantum wells grown by molecular beam epitaxy with and without superlattice cladding layers are obtained with photoluminescence time-decay measurements. The authors show that superlattice layers reduce the interfacial recombination velocity from 330 cm/s, the value for double heterostructures with alloy cladding layers, to 40 cm/s, and that they have small effect on the GaAs bulk lifetime.
|Number of pages||2|
|Journal||Applied Physics Letters|
|Publication status||Published - 1989|
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)