The critical current density required for current-induced domain wall motion (Jc) was reduced by decreasing the magnetization (Ms) of the free layer film of a U-shaped pattern for a domain wall motion memory. The Ms was decreased by adding the nonmagnetic elements Ta and Cu to NiFe films. The Jc of the U-shaped patterns with NiFe-Ta and -Cu decreased as the proportion of Ta and Cu in the NiFe increased. The relations between Ms and Jc were examined and it was found that Jc decreased monotonically from 1.2× 1012 to 0.8× 1012 A m2 as Ms decreased from 1.0 to 0.6 T regardless of what other materials were used. It is considered that the decrease in Ms caused a decrease in the hard axis anisotropy of the pattern, and the Jc decreased as predicted by a one-dimensional model.