Reduction of efficiency droop in semipolar (11-01) InGaN/GaN light emitting diodes grown on patterned silicon substrates

C. H. Chiu; D. W. Lin; C. C. Lin; Z. Y. Li; H. C. Kuo; T. C. Lu; S. C. Wang; W. T. Liao; T. Tanikawa; Y. Honda; M. Yamaguchi; N. Sawaki

Reduction of efficiency droop in semipolar (11-01) InGaN/GaN light emitting diodes grown on patterned silicon substrates

C. H. Chiu, D. W. Lin, C. C. Lin, Z. Y. Li, H. C. Kuo, T. C. Lu, S. C. Wang, W. T. Liao, T. Tanikawa, Y. Honda, M. Yamaguchi, N. Sawaki

Materials Design Division

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

The semi-polar InGaN-based LEDs exhibits low efficiency droop because the reduction of the polarization field not only made the band diagram smoother but also restricted electron overflow to the p-GaN layer as shown in simulations.

Original language	English
Title of host publication	CLEO
Subtitle of host publication	Science and Innovations, CLEO_SI 2011
Publication status	Published - 2011 Dec 1
Event	CLEO: Science and Innovations, CLEO_SI 2011 - Baltimore, MD, United States Duration: 2011 May 1 → 2011 May 6

Publication series

Name	Optics InfoBase Conference Papers
ISSN (Electronic)	2162-2701

Other

Other	CLEO: Science and Innovations, CLEO_SI 2011
Country/Territory	United States
City	Baltimore, MD
Period	11/5/1 → 11/5/6

ASJC Scopus subject areas

Instrumentation
Atomic and Molecular Physics, and Optics

Cite this

Chiu, CH, Lin, DW, Lin, CC, Li, ZY, Kuo, HC, Lu, TC, Wang, SC, Liao, WT, Tanikawa, T, Honda, Y, Yamaguchi, M & Sawaki, N 2011, Reduction of efficiency droop in semipolar (11-01) InGaN/GaN light emitting diodes grown on patterned silicon substrates. in CLEO: Science and Innovations, CLEO_SI 2011. Optics InfoBase Conference Papers, CLEO: Science and Innovations, CLEO_SI 2011, Baltimore, MD, United States, 11/5/1.

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title = "Reduction of efficiency droop in semipolar (11-01) InGaN/GaN light emitting diodes grown on patterned silicon substrates",

abstract = "The semi-polar InGaN-based LEDs exhibits low efficiency droop because the reduction of the polarization field not only made the band diagram smoother but also restricted electron overflow to the p-GaN layer as shown in simulations.",

author = "Chiu, {C. H.} and Lin, {D. W.} and Lin, {C. C.} and Li, {Z. Y.} and Kuo, {H. C.} and Lu, {T. C.} and Wang, {S. C.} and Liao, {W. T.} and T. Tanikawa and Y. Honda and M. Yamaguchi and N. Sawaki",

year = "2011",

month = dec,

day = "1",

language = "English",

isbn = "9781557529107",

series = "Optics InfoBase Conference Papers",

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note = "CLEO: Science and Innovations, CLEO_SI 2011 ; Conference date: 01-05-2011 Through 06-05-2011",

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T1 - Reduction of efficiency droop in semipolar (11-01) InGaN/GaN light emitting diodes grown on patterned silicon substrates

AU - Chiu, C. H.

AU - Lin, D. W.

AU - Lin, C. C.

AU - Li, Z. Y.

AU - Kuo, H. C.

AU - Lu, T. C.

AU - Wang, S. C.

AU - Liao, W. T.

AU - Tanikawa, T.

AU - Honda, Y.

AU - Yamaguchi, M.

AU - Sawaki, N.

PY - 2011/12/1

Y1 - 2011/12/1

N2 - The semi-polar InGaN-based LEDs exhibits low efficiency droop because the reduction of the polarization field not only made the band diagram smoother but also restricted electron overflow to the p-GaN layer as shown in simulations.

AB - The semi-polar InGaN-based LEDs exhibits low efficiency droop because the reduction of the polarization field not only made the band diagram smoother but also restricted electron overflow to the p-GaN layer as shown in simulations.

UR - http://www.scopus.com/inward/record.url?scp=84893581038&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84893581038&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:84893581038

SN - 9781557529107

T3 - Optics InfoBase Conference Papers

BT - CLEO

T2 - CLEO: Science and Innovations, CLEO_SI 2011

Y2 - 1 May 2011 through 6 May 2011

ER -

Reduction of efficiency droop in semipolar (11-01) InGaN/GaN light emitting diodes grown on patterned silicon substrates

Abstract

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ASJC Scopus subject areas

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