TY - JOUR
T1 - Reduction of polycrystalline grains region near the crucible wall during seeded growth of monocrystalline silicon in a unidirectional solidification furnace
AU - Gao, B.
AU - Nakano, S.
AU - Harada, H.
AU - Miyamura, Y.
AU - Sekiguchi, T.
AU - Kakimoto, K.
N1 - Funding Information:
This work was partly supported by the New Energy and Industrial Technology Development Organization (NEDO) under the Ministry of Economy, Trade and Industry (METI) .
PY - 2012/8/1
Y1 - 2012/8/1
N2 - The generation of polycrystalline grains region near the crucible wall during seeded growth of monocrystalline silicon in a unidirectional solidification furnace was analyzed numerically. The crystal-melt interface is tracked by an enthalpy method. Numerical results show that some polycrystalline silicon grains generates along the crucible wall and marches into the interior of crystal. The ratio of polycrystalline silicon grains in a global crystal is mainly determined by a ratio of thermal flux along the crucible wall to thermal flux along the seed. By reducing the thermal flux along the crucible wall or by increasing the thermal flux along the seed, the ratio of polycrystalline silicon grains in a global crystal can be markedly reduced.
AB - The generation of polycrystalline grains region near the crucible wall during seeded growth of monocrystalline silicon in a unidirectional solidification furnace was analyzed numerically. The crystal-melt interface is tracked by an enthalpy method. Numerical results show that some polycrystalline silicon grains generates along the crucible wall and marches into the interior of crystal. The ratio of polycrystalline silicon grains in a global crystal is mainly determined by a ratio of thermal flux along the crucible wall to thermal flux along the seed. By reducing the thermal flux along the crucible wall or by increasing the thermal flux along the seed, the ratio of polycrystalline silicon grains in a global crystal can be markedly reduced.
KW - A1. Computer simulation
KW - A1. Directional solidification
KW - B2. Semiconducting silicon
KW - B3. Solar cells
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U2 - 10.1016/j.jcrysgro.2011.11.084
DO - 10.1016/j.jcrysgro.2011.11.084
M3 - Article
AN - SCOPUS:84863319334
SN - 0022-0248
VL - 352
SP - 47
EP - 52
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
IS - 1
ER -