Reflection electron diffraction intensity oscillation during molecular beam epitaxial growth of (GaAs)n/(InAs)n superlattice semiconductor

H. Ohno; R. Katsumi; H. Hasegawa

doi:10.1016/0039-6028(86)90478-4

Reflection electron diffraction intensity oscillation during molecular beam epitaxial growth of (GaAs)_n/(InAs)_n superlattice semiconductor

H. Ohno, R. Katsumi, H. Hasegawa

Leadership

Hokkaido University

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Original language	English
Pages (from-to)	598-599
Number of pages	2
Journal	Surface Science
Volume	174
Issue number	1-3
DOIs	https://doi.org/10.1016/0039-6028(86)90478-4
Publication status	Published - 1986 Aug 3

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10.1016/0039-6028(86)90478-4

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@article{259b865d8eba4d2a83792b0303653eec,

title = "Reflection electron diffraction intensity oscillation during molecular beam epitaxial growth of (GaAs)n/(InAs)n superlattice semiconductor",

author = "H. Ohno and R. Katsumi and H. Hasegawa",

note = "Funding Information: We acknowledge Dr. T. Takama for helpful discussions on X-ray diffraction. This work is partially supported by a Grant-in-Aid from the Ministry of Education, Science and Culture of Japan.",

year = "1986",

month = aug,

day = "3",

doi = "10.1016/0039-6028(86)90478-4",

language = "English",

volume = "174",

pages = "598--599",

journal = "Surface Science",

issn = "0039-6028",

publisher = "Elsevier",

number = "1-3",

}

TY - JOUR

T1 - Reflection electron diffraction intensity oscillation during molecular beam epitaxial growth of (GaAs)n/(InAs)n superlattice semiconductor

AU - Ohno, H.

AU - Katsumi, R.

AU - Hasegawa, H.

N1 - Funding Information: We acknowledge Dr. T. Takama for helpful discussions on X-ray diffraction. This work is partially supported by a Grant-in-Aid from the Ministry of Education, Science and Culture of Japan.

PY - 1986/8/3

Y1 - 1986/8/3

UR - http://www.scopus.com/inward/record.url?scp=46149131896&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=46149131896&partnerID=8YFLogxK

U2 - 10.1016/0039-6028(86)90478-4

DO - 10.1016/0039-6028(86)90478-4

M3 - Article

AN - SCOPUS:46149131896

SN - 0039-6028

VL - 174

SP - 598

EP - 599

JO - Surface Science

JF - Surface Science

IS - 1-3

ER -

Reflection electron diffraction intensity oscillation during molecular beam epitaxial growth of (GaAs)n/(InAs)n superlattice semiconductor

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Reflection electron diffraction intensity oscillation during molecular beam epitaxial growth of (GaAs)_n/(InAs)_n superlattice semiconductor