Reflow behavior of Cu-Mn in LSI line patterns

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The reflow behavior of sputter-deposited Cu-Mn alloy into narrow trench lines formed in a SiO2 dielectric layer was investigated. At a substrate temperature of 350 °C, Cu-Mn completely filled a trench of 50nm width. The reflow was rate-controlled by mixed-mode diffusion. An interfacial layer was formed between Cu and SiO2 during this process, which was considered to improve wettability and enhance reflow filling. The reflowed Cu-Mn lines had a few grain boundaries, most of which are coherent twin boundaries.

Original languageEnglish
Article number05GA09
JournalJapanese Journal of Applied Physics
Issue number5 SPEC. ISSUE 2
Publication statusPublished - 2014 May


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