TY - JOUR
T1 - Reflow behavior of Cu-Mn in LSI line patterns
AU - Saito, Tomohiro
AU - Ando, Daisuke
AU - Sutou, Yuji
AU - Koike, Junichi
PY - 2014/5
Y1 - 2014/5
N2 - The reflow behavior of sputter-deposited Cu-Mn alloy into narrow trench lines formed in a SiO2 dielectric layer was investigated. At a substrate temperature of 350 °C, Cu-Mn completely filled a trench of 50nm width. The reflow was rate-controlled by mixed-mode diffusion. An interfacial layer was formed between Cu and SiO2 during this process, which was considered to improve wettability and enhance reflow filling. The reflowed Cu-Mn lines had a few grain boundaries, most of which are coherent twin boundaries.
AB - The reflow behavior of sputter-deposited Cu-Mn alloy into narrow trench lines formed in a SiO2 dielectric layer was investigated. At a substrate temperature of 350 °C, Cu-Mn completely filled a trench of 50nm width. The reflow was rate-controlled by mixed-mode diffusion. An interfacial layer was formed between Cu and SiO2 during this process, which was considered to improve wettability and enhance reflow filling. The reflowed Cu-Mn lines had a few grain boundaries, most of which are coherent twin boundaries.
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U2 - 10.7567/JJAP.53.05GA09
DO - 10.7567/JJAP.53.05GA09
M3 - Article
AN - SCOPUS:84903313330
SN - 0021-4922
VL - 53
JO - Japanese Journal of Applied Physics
JF - Japanese Journal of Applied Physics
IS - 5 SPEC. ISSUE 2
M1 - 05GA09
ER -