TY - JOUR
T1 - Relation between critical current of domain wall motion and wire dimension in perpendicularly magnetized Co/Ni nanowires
AU - Fukami, S.
AU - Nakatani, Y.
AU - Suzuki, T.
AU - Nagahara, K.
AU - Ohshima, N.
AU - Ishiwata, N.
N1 - Funding Information:
The authors would like to thank Professor T. Ono and Dr. D. Chiba of Kyoto University for thoughtful discussion. A portion of this work was supported by New Energy and Industrial Technology Development Organization Spintronics nonvolatile project.
PY - 2009
Y1 - 2009
N2 - We investigated the relation between critical current of domain wall motion and wire dimension by using perpendicularly magnetized Co/Ni nanowires with different widths and thicknesses. The critical current, Ic, became less than 0.2 mA when w<100 nm, suggesting that magnetic random access memory with domain wall motion can replace conventional embedded memories. In addition, in agreement with theory, the critical current density, jc, decreased as wire width decreased and became much less than 5× 10 7 A/ cm2 when w<100 nm. We also performed a micromagnetic simulation and obtained good agreement between the experiment and simulation, although a few discrepancies were found.
AB - We investigated the relation between critical current of domain wall motion and wire dimension by using perpendicularly magnetized Co/Ni nanowires with different widths and thicknesses. The critical current, Ic, became less than 0.2 mA when w<100 nm, suggesting that magnetic random access memory with domain wall motion can replace conventional embedded memories. In addition, in agreement with theory, the critical current density, jc, decreased as wire width decreased and became much less than 5× 10 7 A/ cm2 when w<100 nm. We also performed a micromagnetic simulation and obtained good agreement between the experiment and simulation, although a few discrepancies were found.
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U2 - 10.1063/1.3271827
DO - 10.1063/1.3271827
M3 - Article
AN - SCOPUS:71949104688
SN - 0003-6951
VL - 95
JO - Applied Physics Letters
JF - Applied Physics Letters
IS - 23
M1 - 232504
ER -