Relationship between anomalous Ettingshausen effect and anomalous Nernst effect in an FePt thin film

T. Seki, R. Iguchi, K. Takanashi, K. Uchida

Research output: Contribution to journalArticlepeer-review

35 Citations (Scopus)

Abstract

We investigated anomalous Ettingshausen effect (AEE) and anomalous Nernst effect (ANE) for the same device consisting of an FePt thin film. The temperature modulation due to the AEE was visualized using the active infrared emission microscopy, called lock-in thermography. On the other hand, the ANE voltage was detected under the temperature gradient induced by the heater built into the device. We experimentally evaluated the magnitudes of AEE and ANE, taking into account the heat loss to the substrate, and discussed the relationship between AEE and ANE.

Original languageEnglish
Article number254001
JournalJournal Physics D: Applied Physics
Volume51
Issue number25
DOIs
Publication statusPublished - 2018 May 30

Keywords

  • anomalous Ettingshausen effect
  • anomalous Nernst effect
  • FePt

Fingerprint

Dive into the research topics of 'Relationship between anomalous Ettingshausen effect and anomalous Nernst effect in an FePt thin film'. Together they form a unique fingerprint.

Cite this