Relationship between band alignment and chemical states upon annealing in HfSiON/SiON stacked films on Si substrates

T. Tanimura; S. Toyoda; H. Kamada; H. Kumigashira; M. Oshima; G. L. Liu; Z. Liu; K. Ikeda

doi:10.1063/1.3258073

Relationship between band alignment and chemical states upon annealing in HfSiON/SiON stacked films on Si substrates

T. Tanimura, S. Toyoda, H. Kamada, H. Kumigashira, M. Oshima, G. L. Liu, Z. Liu, K. Ikeda

IMRAM - Division of Inorganic Material Research

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

We have investigated the relationship between band alignment and chemical states in HfSiON/SiON stacked films on Si substrates by photoemission spectroscopy and x-ray absorption spectroscopy. Valence-band maxima mainly derived from N 2p states in HfSiON films are closely related to N-Hf bonding configurations. The valence-band offset for a thick HfSiON film is smaller than that for a thin HfSiON film, due to the amount of N-Hf bonding states. Since N-Hf bonding states decrease upon annealing, thickness dependence of valence-band offset can be eliminated. On the other hand, the conduction-band offset does not depend on either the thickness or annealing.

Original language	English
Article number	183113
Journal	Applied Physics Letters
Volume	95
Issue number	18
DOIs	https://doi.org/10.1063/1.3258073
Publication status	Published - 2009

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title = "Relationship between band alignment and chemical states upon annealing in HfSiON/SiON stacked films on Si substrates",

abstract = "We have investigated the relationship between band alignment and chemical states in HfSiON/SiON stacked films on Si substrates by photoemission spectroscopy and x-ray absorption spectroscopy. Valence-band maxima mainly derived from N 2p states in HfSiON films are closely related to N-Hf bonding configurations. The valence-band offset for a thick HfSiON film is smaller than that for a thin HfSiON film, due to the amount of N-Hf bonding states. Since N-Hf bonding states decrease upon annealing, thickness dependence of valence-band offset can be eliminated. On the other hand, the conduction-band offset does not depend on either the thickness or annealing.",

author = "T. Tanimura and S. Toyoda and H. Kamada and H. Kumigashira and M. Oshima and Liu, {G. L.} and Z. Liu and K. Ikeda",

note = "Funding Information: The authors would like to thank the Semiconductor Leading Edge Technologies, Inc., (Selete) for providing the high- gate dielectric samples. This work was supported by the Semiconductor Technology Academic Research Center (STARC). The synchrotron-radiation photoemission measurements were performed under the Project No. 05S2–002 at the Institute of Materials Structure Science at KEK.",

year = "2009",

doi = "10.1063/1.3258073",

language = "English",

volume = "95",

journal = "Applied Physics Letters",

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publisher = "American Institute of Physics",

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TY - JOUR

T1 - Relationship between band alignment and chemical states upon annealing in HfSiON/SiON stacked films on Si substrates

AU - Tanimura, T.

AU - Toyoda, S.

AU - Kamada, H.

AU - Kumigashira, H.

AU - Oshima, M.

AU - Liu, G. L.

AU - Liu, Z.

AU - Ikeda, K.

N1 - Funding Information: The authors would like to thank the Semiconductor Leading Edge Technologies, Inc., (Selete) for providing the high- gate dielectric samples. This work was supported by the Semiconductor Technology Academic Research Center (STARC). The synchrotron-radiation photoemission measurements were performed under the Project No. 05S2–002 at the Institute of Materials Structure Science at KEK.

PY - 2009

Y1 - 2009

N2 - We have investigated the relationship between band alignment and chemical states in HfSiON/SiON stacked films on Si substrates by photoemission spectroscopy and x-ray absorption spectroscopy. Valence-band maxima mainly derived from N 2p states in HfSiON films are closely related to N-Hf bonding configurations. The valence-band offset for a thick HfSiON film is smaller than that for a thin HfSiON film, due to the amount of N-Hf bonding states. Since N-Hf bonding states decrease upon annealing, thickness dependence of valence-band offset can be eliminated. On the other hand, the conduction-band offset does not depend on either the thickness or annealing.

AB - We have investigated the relationship between band alignment and chemical states in HfSiON/SiON stacked films on Si substrates by photoemission spectroscopy and x-ray absorption spectroscopy. Valence-band maxima mainly derived from N 2p states in HfSiON films are closely related to N-Hf bonding configurations. The valence-band offset for a thick HfSiON film is smaller than that for a thin HfSiON film, due to the amount of N-Hf bonding states. Since N-Hf bonding states decrease upon annealing, thickness dependence of valence-band offset can be eliminated. On the other hand, the conduction-band offset does not depend on either the thickness or annealing.

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ER -

Relationship between band alignment and chemical states upon annealing in HfSiON/SiON stacked films on Si substrates

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