Relationship between gallium concentration and resistivity of gallium-doped czochralski silicon crystals: Investigation of a conversion curve

Takeshi Hoshikawa; Xinming Huang; Keigo Hoshikawa; Satoshi Uda

doi:10.1143/JJAP.47.8691

Relationship between gallium concentration and resistivity of gallium-doped czochralski silicon crystals: Investigation of a conversion curve

Takeshi Hoshikawa, Xinming Huang, Keigo Hoshikawa, Satoshi Uda

New Industry Creation Hatchery Center (NICHe)

Tohoku University

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

The relationship between gallium (Ga) concentration and resistivity was studied in Ga-doped Czochralski (CZ) silicon (Si) single crystals in the dopant concentration range from 1 × 10¹⁴ to 2 × 10¹⁸ atoms/cm³ by the four-point probe method, inductively coupled plasma (ICP) analysis, and Hall-effect measurement. The resistivity of Ga-doped Si was found to be larger than that of B-doped Si, because Ga is not fully ionized at Ga concentrations higher than 10¹⁶ atoms/cm³ at 300 K. A conversion curve from resistivity to Ga concentration in the range from 1 × 10¹⁴ to 1 × 10¹⁷ atoms/cm³ is proposed.

Original language	English
Pages (from-to)	8691-8695
Number of pages	5
Journal	Japanese Journal of Applied Physics
Volume	47
Issue number	12
DOIs	https://doi.org/10.1143/JJAP.47.8691
Publication status	Published - 2008 Dec 19

Keywords

Acceptor concentration
Conductivity mobility
Conversion curve
CZ-si crystal
Ga concentration
Ga-doped silicon
Resistivity
Solar cell

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10.1143/JJAP.47.8691

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title = "Relationship between gallium concentration and resistivity of gallium-doped czochralski silicon crystals: Investigation of a conversion curve",

abstract = "The relationship between gallium (Ga) concentration and resistivity was studied in Ga-doped Czochralski (CZ) silicon (Si) single crystals in the dopant concentration range from 1 × 1014 to 2 × 1018 atoms/cm3 by the four-point probe method, inductively coupled plasma (ICP) analysis, and Hall-effect measurement. The resistivity of Ga-doped Si was found to be larger than that of B-doped Si, because Ga is not fully ionized at Ga concentrations higher than 1016 atoms/cm3 at 300 K. A conversion curve from resistivity to Ga concentration in the range from 1 × 1014 to 1 × 1017 atoms/cm3 is proposed.",

keywords = "Acceptor concentration, Conductivity mobility, Conversion curve, CZ-si crystal, Ga concentration, Ga-doped silicon, Resistivity, Solar cell",

author = "Takeshi Hoshikawa and Xinming Huang and Keigo Hoshikawa and Satoshi Uda",

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T1 - Relationship between gallium concentration and resistivity of gallium-doped czochralski silicon crystals

T2 - Investigation of a conversion curve

AU - Hoshikawa, Takeshi

AU - Huang, Xinming

AU - Hoshikawa, Keigo

AU - Uda, Satoshi

PY - 2008/12/19

Y1 - 2008/12/19

N2 - The relationship between gallium (Ga) concentration and resistivity was studied in Ga-doped Czochralski (CZ) silicon (Si) single crystals in the dopant concentration range from 1 × 1014 to 2 × 1018 atoms/cm3 by the four-point probe method, inductively coupled plasma (ICP) analysis, and Hall-effect measurement. The resistivity of Ga-doped Si was found to be larger than that of B-doped Si, because Ga is not fully ionized at Ga concentrations higher than 1016 atoms/cm3 at 300 K. A conversion curve from resistivity to Ga concentration in the range from 1 × 1014 to 1 × 1017 atoms/cm3 is proposed.

AB - The relationship between gallium (Ga) concentration and resistivity was studied in Ga-doped Czochralski (CZ) silicon (Si) single crystals in the dopant concentration range from 1 × 1014 to 2 × 1018 atoms/cm3 by the four-point probe method, inductively coupled plasma (ICP) analysis, and Hall-effect measurement. The resistivity of Ga-doped Si was found to be larger than that of B-doped Si, because Ga is not fully ionized at Ga concentrations higher than 1016 atoms/cm3 at 300 K. A conversion curve from resistivity to Ga concentration in the range from 1 × 1014 to 1 × 1017 atoms/cm3 is proposed.

KW - Acceptor concentration

KW - Conductivity mobility

KW - Conversion curve

KW - CZ-si crystal

KW - Ga concentration

KW - Ga-doped silicon

KW - Resistivity

KW - Solar cell

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JO - Japanese Journal of Applied Physics

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Relationship between gallium concentration and resistivity of gallium-doped czochralski silicon crystals: Investigation of a conversion curve

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Keywords

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