Relationship between grain boundary structures in Si multicrystals and generation of dislocations during crystal growth

Noritaka Usami; Ryusuke Yokoyama; Isao Takahashi; Kentaro Kutsukake; Kozo Fujiwara; Kazuo Nakajima

doi:10.1063/1.3276219

Relationship between grain boundary structures in Si multicrystals and generation of dislocations during crystal growth

Noritaka Usami, Ryusuke Yokoyama, Isao Takahashi, Kentaro Kutsukake, Kozo Fujiwara, Kazuo Nakajima

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46 Citations (Scopus)

Abstract

We attempted to clarify relationship between grain boundary structures in Si multicrystals and generation of dislocations during crystal growth. Systematic variation of grain boundary structures was realized by employing dendritic nucleation at the initial stage of crystal growth. Etch-pit observation revealed that the contact angle of adjacent dendrite crystals to form a grain boundary affects generation of dislocations. Experimentally observed dislocation density was found to be well correlated with shear stress around the grain boundary calculated by finite element analysis.

Original language	English
Article number	013511
Journal	Journal of Applied Physics
Volume	107
Issue number	1
DOIs	https://doi.org/10.1063/1.3276219
Publication status	Published - 2010 Feb 5

ASJC Scopus subject areas

Physics and Astronomy(all)

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10.1063/1.3276219

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AU - Yokoyama, Ryusuke

AU - Takahashi, Isao

AU - Kutsukake, Kentaro

AU - Fujiwara, Kozo

AU - Nakajima, Kazuo

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AB - We attempted to clarify relationship between grain boundary structures in Si multicrystals and generation of dislocations during crystal growth. Systematic variation of grain boundary structures was realized by employing dendritic nucleation at the initial stage of crystal growth. Etch-pit observation revealed that the contact angle of adjacent dendrite crystals to form a grain boundary affects generation of dislocations. Experimentally observed dislocation density was found to be well correlated with shear stress around the grain boundary calculated by finite element analysis.

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Relationship between grain boundary structures in Si multicrystals and generation of dislocations during crystal growth

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