Relationship between Sr2(Ta1-xNbx) 2O7 crystal phase and RF-sputtering plasma condition for metal-ferroelectric-insulator-Si structure device formation

Ichirou Takahashi; Hiroyuki Sakurai; Tatsunori Isogai; Masaki Hirayama; Akinobu Teramoto; Shigetoshi Sugawa; Tadahiro Ohmi

doi:10.1143/JJAP.45.3207

Relationship between Sr₂(Ta_1-xNb_x) ₂O₇ crystal phase and RF-sputtering plasma condition for metal-ferroelectric-insulator-Si structure device formation

Ichirou Takahashi, Hiroyuki Sakurai, Tatsunori Isogai, Masaki Hirayama, Akinobu Teramoto, Shigetoshi Sugawa, Tadahiro Ohmi

New Industry Creation Hatchery Center (NICHe)

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

Sr₂Ta_1-xNb_x)₂O₇ (STN, x = 0.3) is suitable for use as a ferroelectric material for ferroelectric memory field-effect transistors, because it has a low dielectric constant. However, the fabrication of STN on an amorphous insulator, such as SiO ₂, is difficult. In particular, in the case of STN, because its crystallization annealing temperature is 950 °C, the metal element of STN and Si react mutually during crystallization annealing. As a result, perovskite STN cannot be fabricated. We have clarified the relationship between a ferroelectric crystal phase on amorphous SiO₂ and an rf-sputtering plasma condition. On the basis of the results obtained, STN film formation technologies on SiO₂, which can be applied to metal-ferroelectric- insulator-Si field-effect transistor-type ferroelectric random access memories, have been developed by controlling the properties of rf-sputtering plasma and the application of microwave-excited plasma.

Original language	English
Pages (from-to)	3207-3212
Number of pages	6
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	45
Issue number	4 B
DOIs	https://doi.org/10.1143/JJAP.45.3207
Publication status	Published - 2006 Apr 25

Keywords

Ferroelectric crystallization on amorphous insulator
High crystallization annealing temperature
MFIS-FET
Microwave-excited plasma
Rf-sputtering plasma
Sr(TaNb)O (STN)

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

Access to Document

10.1143/JJAP.45.3207

Cite this

Takahashi, I., Sakurai, H., Isogai, T., Hirayama, M., Teramoto, A., Sugawa, S., & Ohmi, T. (2006). Relationship between Sr₂(Ta_1-xNb_x) ₂O₇ crystal phase and RF-sputtering plasma condition for metal-ferroelectric-insulator-Si structure device formation. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 45(4 B), 3207-3212. https://doi.org/10.1143/JJAP.45.3207

Relationship between Sr₂(Ta_1-xNb_x) ₂O₇ crystal phase and RF-sputtering plasma condition for metal-ferroelectric-insulator-Si structure device formation. / Takahashi, Ichirou; Sakurai, Hiroyuki; Isogai, Tatsunori et al.
In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 45, No. 4 B, 25.04.2006, p. 3207-3212.

Research output: Contribution to journal › Article › peer-review

Takahashi, I, Sakurai, H, Isogai, T, Hirayama, M, Teramoto, A, Sugawa, S & Ohmi, T 2006, 'Relationship between Sr₂(Ta_1-xNb_x) ₂O₇ crystal phase and RF-sputtering plasma condition for metal-ferroelectric-insulator-Si structure device formation', Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, vol. 45, no. 4 B, pp. 3207-3212. https://doi.org/10.1143/JJAP.45.3207

Takahashi I, Sakurai H, Isogai T, Hirayama M, Teramoto A, Sugawa S et al. Relationship between Sr₂(Ta_1-xNb_x) ₂O₇ crystal phase and RF-sputtering plasma condition for metal-ferroelectric-insulator-Si structure device formation. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 2006 Apr 25;45(4 B):3207-3212. doi: 10.1143/JJAP.45.3207

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abstract = "Sr2Ta1-xNbx)2O7 (STN, x = 0.3) is suitable for use as a ferroelectric material for ferroelectric memory field-effect transistors, because it has a low dielectric constant. However, the fabrication of STN on an amorphous insulator, such as SiO 2, is difficult. In particular, in the case of STN, because its crystallization annealing temperature is 950 °C, the metal element of STN and Si react mutually during crystallization annealing. As a result, perovskite STN cannot be fabricated. We have clarified the relationship between a ferroelectric crystal phase on amorphous SiO2 and an rf-sputtering plasma condition. On the basis of the results obtained, STN film formation technologies on SiO2, which can be applied to metal-ferroelectric- insulator-Si field-effect transistor-type ferroelectric random access memories, have been developed by controlling the properties of rf-sputtering plasma and the application of microwave-excited plasma.",

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AU - Isogai, Tatsunori

AU - Hirayama, Masaki

AU - Teramoto, Akinobu

AU - Sugawa, Shigetoshi

AU - Ohmi, Tadahiro

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N2 - Sr2Ta1-xNbx)2O7 (STN, x = 0.3) is suitable for use as a ferroelectric material for ferroelectric memory field-effect transistors, because it has a low dielectric constant. However, the fabrication of STN on an amorphous insulator, such as SiO 2, is difficult. In particular, in the case of STN, because its crystallization annealing temperature is 950 °C, the metal element of STN and Si react mutually during crystallization annealing. As a result, perovskite STN cannot be fabricated. We have clarified the relationship between a ferroelectric crystal phase on amorphous SiO2 and an rf-sputtering plasma condition. On the basis of the results obtained, STN film formation technologies on SiO2, which can be applied to metal-ferroelectric- insulator-Si field-effect transistor-type ferroelectric random access memories, have been developed by controlling the properties of rf-sputtering plasma and the application of microwave-excited plasma.

AB - Sr2Ta1-xNbx)2O7 (STN, x = 0.3) is suitable for use as a ferroelectric material for ferroelectric memory field-effect transistors, because it has a low dielectric constant. However, the fabrication of STN on an amorphous insulator, such as SiO 2, is difficult. In particular, in the case of STN, because its crystallization annealing temperature is 950 °C, the metal element of STN and Si react mutually during crystallization annealing. As a result, perovskite STN cannot be fabricated. We have clarified the relationship between a ferroelectric crystal phase on amorphous SiO2 and an rf-sputtering plasma condition. On the basis of the results obtained, STN film formation technologies on SiO2, which can be applied to metal-ferroelectric- insulator-Si field-effect transistor-type ferroelectric random access memories, have been developed by controlling the properties of rf-sputtering plasma and the application of microwave-excited plasma.

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