Relaxation of photoinjected spins during drift transport in GaAs

H. Sanada, I. Arata, Y. Ohno, Z. Chen, K. Kayanuma, Y. Oka, F. Matsukura, H. Ohno

Research output: Contribution to journalArticlepeer-review

58 Citations (Scopus)


We studied the transport of photoinjected spins in GaAs by time-resolved photoluminescence measurements. At low temperatures, the spin polarization after drift transport of 4 μm is found to decrease as the applied electric field E increases to a few kV/cm, and it disappears when E exceeds 3 kV/cm. The origin of the field-dependent spin relaxation is discussed.

Original languageEnglish
Pages (from-to)2788-2790
Number of pages3
JournalApplied Physics Letters
Issue number15
Publication statusPublished - 2002 Oct 7


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