Reliability study of parasitic source and drain resistances of InP-based HEMTs

T. Suemitsu, Y. K. Fukai, H. Sugiyama, K. Watanabe, H. Yokoyama

Research output: Contribution to journalConference articlepeer-review

8 Citations (Scopus)


The reliability of InP-based HEMTs is studied, focussing on how it is affected by the doped layer material and gate recess structure. Bias and temperature (BT) stress tests reveal that fluorine-induced donor passivation in the recess region, formed adjacent to the gate electrode, causes the source resistance (Rs) to increase at large drain bias voltages. The increase in Rs can be prevented by using InP or InAlP as the carrier supply layer material instead of InAlAs. On the other hand, drain resistance (Rd) increased due to carrier depletion in the drain ohmic region, which occurs not only in the recess region but also in the n+-capped region between the gate recess and the drain electrode, which is also affected by hot-carrier-induced damage.

Original languageEnglish
Pages (from-to)190-193
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting
Publication statusPublished - 2000
Event2000 IEEE International Electron Devices Meeting - San Francisco, CA, United States
Duration: 2000 Dec 102000 Dec 13


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