Remarkable enhancement in thermoelectric performance of BiCuSeO by Cu deficiencies

Yong Liu; Li Dong Zhao; Yaochun Liu; Jinle Lan; Wei Xu; Fu Li; Bo Ping Zhang; David Berardan; Nita Dragoe; Yuan Hua Lin; Ce Wen Nan; Jing Feng Li; Hongmin Zhu

doi:10.1021/ja2091195

Remarkable enhancement in thermoelectric performance of BiCuSeO by Cu deficiencies

Yong Liu, Li Dong Zhao, Yaochun Liu, Jinle Lan, Wei Xu, Fu Li, Bo Ping Zhang, David Berardan, Nita Dragoe, Yuan Hua Lin, Ce Wen Nan, Jing Feng Li, Hongmin Zhu

ENG - Metallurgy

Research output: Contribution to journal › Article › peer-review

268 Citations (Scopus)

Abstract

A significant enhancement of thermoelectric performance in layered oxyselenides BiCuSeO was achieved. The electrical conductivity and Seebeck coefficient of BiCu_1-xSeO (x = 0-0.1) indicate that the carriers were introduced in the (Cu₂Se₂)^2- layer by Cu deficiencies. The maximum of electrical conductivity is 3 × 10³ S m^-1 for Bicu_0.975Seo at 650 °C, much larger than 470 S m^-1 for pristine BiCuSeO. Featured with very low thermal conductivity (∼0.5 W m^-1 K^-1) and a large Seebeck coefficient (+273 μV K^-1), ZT at 650 °C is significantly increased from 0.50 for pristine BiCuSeO to 0.81 for BiCu_0.975SeO by introducing Cu deficiencies, which makes it a promising candidate for medium temperature thermoelectric applications.

Original language	English
Pages (from-to)	20112-20115
Number of pages	4
Journal	Journal of the American Chemical Society
Volume	133
Issue number	50
DOIs	https://doi.org/10.1021/ja2091195
Publication status	Published - 2011 Dec 21

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10.1021/ja2091195

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title = "Remarkable enhancement in thermoelectric performance of BiCuSeO by Cu deficiencies",

abstract = "A significant enhancement of thermoelectric performance in layered oxyselenides BiCuSeO was achieved. The electrical conductivity and Seebeck coefficient of BiCu1-xSeO (x = 0-0.1) indicate that the carriers were introduced in the (Cu2Se2)2- layer by Cu deficiencies. The maximum of electrical conductivity is 3 × 103 S m-1 for Bicu0.975Seo at 650 °C, much larger than 470 S m-1 for pristine BiCuSeO. Featured with very low thermal conductivity (∼0.5 W m-1 K-1) and a large Seebeck coefficient (+273 μV K-1), ZT at 650 °C is significantly increased from 0.50 for pristine BiCuSeO to 0.81 for BiCu0.975SeO by introducing Cu deficiencies, which makes it a promising candidate for medium temperature thermoelectric applications.",

author = "Yong Liu and Zhao, {Li Dong} and Yaochun Liu and Jinle Lan and Wei Xu and Fu Li and Zhang, {Bo Ping} and David Berardan and Nita Dragoe and Lin, {Yuan Hua} and Nan, {Ce Wen} and Li, {Jing Feng} and Hongmin Zhu",

year = "2011",

month = dec,

day = "21",

doi = "10.1021/ja2091195",

language = "English",

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TY - JOUR

T1 - Remarkable enhancement in thermoelectric performance of BiCuSeO by Cu deficiencies

AU - Liu, Yong

AU - Zhao, Li Dong

AU - Liu, Yaochun

AU - Lan, Jinle

AU - Xu, Wei

AU - Li, Fu

AU - Zhang, Bo Ping

AU - Berardan, David

AU - Dragoe, Nita

AU - Lin, Yuan Hua

AU - Nan, Ce Wen

AU - Li, Jing Feng

AU - Zhu, Hongmin

PY - 2011/12/21

Y1 - 2011/12/21

N2 - A significant enhancement of thermoelectric performance in layered oxyselenides BiCuSeO was achieved. The electrical conductivity and Seebeck coefficient of BiCu1-xSeO (x = 0-0.1) indicate that the carriers were introduced in the (Cu2Se2)2- layer by Cu deficiencies. The maximum of electrical conductivity is 3 × 103 S m-1 for Bicu0.975Seo at 650 °C, much larger than 470 S m-1 for pristine BiCuSeO. Featured with very low thermal conductivity (∼0.5 W m-1 K-1) and a large Seebeck coefficient (+273 μV K-1), ZT at 650 °C is significantly increased from 0.50 for pristine BiCuSeO to 0.81 for BiCu0.975SeO by introducing Cu deficiencies, which makes it a promising candidate for medium temperature thermoelectric applications.

AB - A significant enhancement of thermoelectric performance in layered oxyselenides BiCuSeO was achieved. The electrical conductivity and Seebeck coefficient of BiCu1-xSeO (x = 0-0.1) indicate that the carriers were introduced in the (Cu2Se2)2- layer by Cu deficiencies. The maximum of electrical conductivity is 3 × 103 S m-1 for Bicu0.975Seo at 650 °C, much larger than 470 S m-1 for pristine BiCuSeO. Featured with very low thermal conductivity (∼0.5 W m-1 K-1) and a large Seebeck coefficient (+273 μV K-1), ZT at 650 °C is significantly increased from 0.50 for pristine BiCuSeO to 0.81 for BiCu0.975SeO by introducing Cu deficiencies, which makes it a promising candidate for medium temperature thermoelectric applications.

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SP - 20112

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JO - Journal of the American Chemical Society

JF - Journal of the American Chemical Society

IS - 50

ER -

Remarkable enhancement in thermoelectric performance of BiCuSeO by Cu deficiencies

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