Removal of Adsorbed Water on Si Wafers for Surface Activated Bonding

Kai Takeuchi; Eiji Higurashi; Junsha Wang; Akira Yamauchi; Tadatomo Suga

doi:10.1109/ICSJ55786.2022.10034710

Removal of Adsorbed Water on Si Wafers for Surface Activated Bonding

Kai Takeuchi, Eiji Higurashi, Junsha Wang, Akira Yamauchi, Tadatomo Suga

ENG - Electronic Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Wafer bonding at room temperature is a crucial technique for integrating and packaging advanced electronic devices. Surface activated bonding (SAB) is a promising technique to bond semiconductor wafers at room temperature, whose bond strength depends on the formation of atomic bonds at the bonding interface. In order to improve the bonding quality of SAB, in this work, we investigate the effect of the removal of the adsorbed water from Si wafer surfaces. Pre-bonding baking of Si wafers at 110°C resulted in improved bond strength by SAB. This approach is able to be applied for SAB for wider materials and applications.

Original language	English
Title of host publication	2022 IEEE CPMT Symposium Japan, ICSJ 2022
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	61-64
Number of pages	4
ISBN (Electronic)	9781665486132
DOIs	https://doi.org/10.1109/ICSJ55786.2022.10034710
Publication status	Published - 2022
Event	11th IEEE CPMT Symposium Japan, ICSJ 2022 - Kyoto, Japan Duration: 2022 Nov 9 → 2022 Nov 11

Publication series

Name	2022 IEEE CPMT Symposium Japan, ICSJ 2022

Conference

Conference	11th IEEE CPMT Symposium Japan, ICSJ 2022
Country/Territory	Japan
City	Kyoto
Period	22/11/9 → 22/11/11

Keywords

Silicon
surface activated bonding
wafer bonding

ASJC Scopus subject areas

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials
Instrumentation
Atomic and Molecular Physics, and Optics

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10.1109/ICSJ55786.2022.10034710

Cite this

Removal of Adsorbed Water on Si Wafers for Surface Activated Bonding. / Takeuchi, Kai; Higurashi, Eiji; Wang, Junsha et al.

2022 IEEE CPMT Symposium Japan, ICSJ 2022. Institute of Electrical and Electronics Engineers Inc., 2022. p. 61-64 (2022 IEEE CPMT Symposium Japan, ICSJ 2022).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Takeuchi, K, Higurashi, E, Wang, J, Yamauchi, A & Suga, T 2022, Removal of Adsorbed Water on Si Wafers for Surface Activated Bonding. in 2022 IEEE CPMT Symposium Japan, ICSJ 2022. 2022 IEEE CPMT Symposium Japan, ICSJ 2022, Institute of Electrical and Electronics Engineers Inc., pp. 61-64, 11th IEEE CPMT Symposium Japan, ICSJ 2022, Kyoto, Japan, 22/11/9. https://doi.org/10.1109/ICSJ55786.2022.10034710

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title = "Removal of Adsorbed Water on Si Wafers for Surface Activated Bonding",

abstract = "Wafer bonding at room temperature is a crucial technique for integrating and packaging advanced electronic devices. Surface activated bonding (SAB) is a promising technique to bond semiconductor wafers at room temperature, whose bond strength depends on the formation of atomic bonds at the bonding interface. In order to improve the bonding quality of SAB, in this work, we investigate the effect of the removal of the adsorbed water from Si wafer surfaces. Pre-bonding baking of Si wafers at 110°C resulted in improved bond strength by SAB. This approach is able to be applied for SAB for wider materials and applications.",

keywords = "Silicon, surface activated bonding, wafer bonding",

author = "Kai Takeuchi and Eiji Higurashi and Junsha Wang and Akira Yamauchi and Tadatomo Suga",

note = "Funding Information: This work is partially supported by Amada Foundation, Japan and The Precise Measurement Technology Promotion Foundation, Japan. Publisher Copyright: {\textcopyright} 2022 IEEE.; 11th IEEE CPMT Symposium Japan, ICSJ 2022 ; Conference date: 09-11-2022 Through 11-11-2022",

year = "2022",

doi = "10.1109/ICSJ55786.2022.10034710",

language = "English",

series = "2022 IEEE CPMT Symposium Japan, ICSJ 2022",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "61--64",

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TY - GEN

T1 - Removal of Adsorbed Water on Si Wafers for Surface Activated Bonding

AU - Takeuchi, Kai

AU - Higurashi, Eiji

AU - Wang, Junsha

AU - Yamauchi, Akira

AU - Suga, Tadatomo

PY - 2022

Y1 - 2022

N2 - Wafer bonding at room temperature is a crucial technique for integrating and packaging advanced electronic devices. Surface activated bonding (SAB) is a promising technique to bond semiconductor wafers at room temperature, whose bond strength depends on the formation of atomic bonds at the bonding interface. In order to improve the bonding quality of SAB, in this work, we investigate the effect of the removal of the adsorbed water from Si wafer surfaces. Pre-bonding baking of Si wafers at 110°C resulted in improved bond strength by SAB. This approach is able to be applied for SAB for wider materials and applications.

AB - Wafer bonding at room temperature is a crucial technique for integrating and packaging advanced electronic devices. Surface activated bonding (SAB) is a promising technique to bond semiconductor wafers at room temperature, whose bond strength depends on the formation of atomic bonds at the bonding interface. In order to improve the bonding quality of SAB, in this work, we investigate the effect of the removal of the adsorbed water from Si wafer surfaces. Pre-bonding baking of Si wafers at 110°C resulted in improved bond strength by SAB. This approach is able to be applied for SAB for wider materials and applications.

KW - Silicon

KW - surface activated bonding

KW - wafer bonding

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T3 - 2022 IEEE CPMT Symposium Japan, ICSJ 2022

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EP - 64

BT - 2022 IEEE CPMT Symposium Japan, ICSJ 2022

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 11th IEEE CPMT Symposium Japan, ICSJ 2022

Y2 - 9 November 2022 through 11 November 2022

ER -

Removal of Adsorbed Water on Si Wafers for Surface Activated Bonding

Abstract

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Conference

Keywords

ASJC Scopus subject areas

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