Removal of the sulfur passivation overlayer on a (NH4) 2Sx-treated GaAs surface by vacuum-ultraviolet irradiation

Yuji Takakuwa; Michio Niwano; Shinya Fujita; Yuki Takeda; Nobuo Miyamoto

doi:10.1063/1.105149

Removal of the sulfur passivation overlayer on a (NH₄) ₂S_x-treated GaAs surface by vacuum-ultraviolet irradiation

Yuji Takakuwa, Michio Niwano, Shinya Fujita, Yuki Takeda, Nobuo Miyamoto

Micro System Integration Center (μSIC)

Tohoku University

Research output: Contribution to journal › Article › peer-review

13 Citations (Scopus)

Abstract

Effects of photon irradiation on the chemical state of a (NH ₄)₂S_x-treated GaAs surface have been investigated using photoemission and photon-stimulated desorption (PSD) spectroscopic techniques with synchrotron radiation (SR). It is shown that a sulfur-passivation overlayer on the (NH₄)₂S _x-treated GaAs surface is readily removed by irradiating SR in the vacuum-ultraviolet (VUV) region onto the surface, suggesting the possibility of cleaning the sulfur-passivated GaAs surface by VUV irradiation. The dominant PSD ion product that desorbs from the sulfur-passivated GaAs surface during VUV irradiation is found to be H⁺. No desorption of sulfur ions is observed, which suggests that sulfur adatoms desorb as neutral species.

Original language	English
Pages (from-to)	1635-1637
Number of pages	3
Journal	Applied Physics Letters
Volume	58
Issue number	15
DOIs	https://doi.org/10.1063/1.105149
Publication status	Published - 1991

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title = "Removal of the sulfur passivation overlayer on a (NH4) 2Sx-treated GaAs surface by vacuum-ultraviolet irradiation",

abstract = "Effects of photon irradiation on the chemical state of a (NH 4)2Sx-treated GaAs surface have been investigated using photoemission and photon-stimulated desorption (PSD) spectroscopic techniques with synchrotron radiation (SR). It is shown that a sulfur-passivation overlayer on the (NH4)2S x-treated GaAs surface is readily removed by irradiating SR in the vacuum-ultraviolet (VUV) region onto the surface, suggesting the possibility of cleaning the sulfur-passivated GaAs surface by VUV irradiation. The dominant PSD ion product that desorbs from the sulfur-passivated GaAs surface during VUV irradiation is found to be H+. No desorption of sulfur ions is observed, which suggests that sulfur adatoms desorb as neutral species.",

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T1 - Removal of the sulfur passivation overlayer on a (NH4) 2Sx-treated GaAs surface by vacuum-ultraviolet irradiation

AU - Takakuwa, Yuji

AU - Niwano, Michio

AU - Fujita, Shinya

AU - Takeda, Yuki

AU - Miyamoto, Nobuo

PY - 1991

Y1 - 1991

N2 - Effects of photon irradiation on the chemical state of a (NH 4)2Sx-treated GaAs surface have been investigated using photoemission and photon-stimulated desorption (PSD) spectroscopic techniques with synchrotron radiation (SR). It is shown that a sulfur-passivation overlayer on the (NH4)2S x-treated GaAs surface is readily removed by irradiating SR in the vacuum-ultraviolet (VUV) region onto the surface, suggesting the possibility of cleaning the sulfur-passivated GaAs surface by VUV irradiation. The dominant PSD ion product that desorbs from the sulfur-passivated GaAs surface during VUV irradiation is found to be H+. No desorption of sulfur ions is observed, which suggests that sulfur adatoms desorb as neutral species.

AB - Effects of photon irradiation on the chemical state of a (NH 4)2Sx-treated GaAs surface have been investigated using photoemission and photon-stimulated desorption (PSD) spectroscopic techniques with synchrotron radiation (SR). It is shown that a sulfur-passivation overlayer on the (NH4)2S x-treated GaAs surface is readily removed by irradiating SR in the vacuum-ultraviolet (VUV) region onto the surface, suggesting the possibility of cleaning the sulfur-passivated GaAs surface by VUV irradiation. The dominant PSD ion product that desorbs from the sulfur-passivated GaAs surface during VUV irradiation is found to be H+. No desorption of sulfur ions is observed, which suggests that sulfur adatoms desorb as neutral species.

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Removal of the sulfur passivation overlayer on a (NH₄) ₂S_x-treated GaAs surface by vacuum-ultraviolet irradiation

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