Repeated temperature modulation epitaxy for p-type doping and light-emitting diode based on ZnO

Atsushi Tsukazaki, Akira Ohtomo, Takeyoshi Onuma, Makoto Ohtani, Takayuki Makino, Masatomo Sumiya, Keita Ohtani, Shigefusa F. Chichibu, Syunrou Fuke, Yusaburou Segawa, Hideo Ohno, Hideomi Koinuma, Masashi Kawasaki

Research output: Contribution to journalArticlepeer-review

2099 Citations (Scopus)


Since the successful demonstration of a blue light-emitting diode (LED)1, potential materials for making short-wavelength LEDs and diode lasers have been attracting increasing interest as the demands for display, illumination and information storage grow2-4. Zinc oxide has substantial advantages including large exciton binding energy, as demonstrated by efficient excitonic lasing on optical excitation5,6. Several groups have postulated the use of p-type ZnO doped with nitrogen, arsenic or phosphorus7-10, and even p-n junctions11-13. However, the choice of dopant and growth technique remains controversial and the reliability of p-type ZnO is still under debate14. If ZnO is ever to produce long-lasting and robust devices, the quality of epitaxial layers has to be improved as has been the protocol in other compound semiconductors15. Here we report high-quality undoped films with electron mobility exceeding that in the bulk We have used a new technique to fabricate p-type ZnO reproducibly. Violet electroluminescence from homostructural p-i-n junctions is demonstrated at room-temperature.

Original languageEnglish
Pages (from-to)42-45
Number of pages4
JournalNature Materials
Issue number1
Publication statusPublished - 2005 Jan


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