@inproceedings{adfaefaea36046f98b1d72177dc989ed,
title = "Research on solvent composition for different surface morphology on C face during 4H-SiC solution growth",
abstract = "Surface morphology of the SiC crystal grown on the C face of the 4H-SiC seed crystal by TSSG method using pure Si, Si-1at%Ti-C, Si-5at%Ti-C and Si-20at%Ti-C solvents was investigated. The surface morphology of the crystal grown from pure Si solvent was smooth. By the addition of Ti to the solvent, the surface morphology became rougher. The RMS value is not proportional to the concentration of Ti. The formation of macrosteps with several micrometers was observed when the addition of Ti increased to 5at% indicating the possibility of the threading screw dislocation conversion on the C face of the 4H-SiC crystal.",
keywords = "4H-SiC, Si-Ti-C, Solution growth, Surface morphology",
author = "Xiao, {Shi Yu} and Natsumi Hara and Shunta Harada and Kenta Murayama and Kenta Aoyagi and Takenobu Sakai and Toru Ujihara",
note = "Publisher Copyright: {\textcopyright} (2015) Trans Tech Publications, Switzerland.; European Conference on Silicon Carbide and Related Materials, ECSCRM 2014 ; Conference date: 21-09-2014 Through 25-09-2014",
year = "2015",
doi = "10.4028/www.scientific.net/MSF.821-823.39",
language = "English",
isbn = "9783038354789",
series = "Materials Science Forum",
publisher = "Trans Tech Publications Ltd",
pages = "39--42",
editor = "Didier Chaussende and Gabriel Ferro",
booktitle = "Silicon Carbide and Related Materials 2014",
}