TY - JOUR
T1 - Residual strains and disorder in ZnSSe epitaxial films on GaAs
AU - Kanemitsu, Yoshihiko
AU - Yamamoto, Aishi
AU - Matsue, Hitoshi
AU - Nabeta, Hiroyuki
AU - Masumoto, Yasuaki
AU - Yamaga, Shigeki
AU - Yoshikawa, Akihiko
AU - Yamanaka, Kazushi
AU - Nagata, Yoshihiko
AU - Koda, Toshio
PY - 1992/2/2
Y1 - 1992/2/2
N2 - A new experimental and analytical method was demonstrated for the quantitative evaluation of disorder and strains in ZnSxSe1-x/GaAs heterostructures. The alloy disorder and the average size of ZnSe microclusters in epitaxial ZnSxSe1-x films were estimated from the linewidth of the ZnSe-like LO-phonon Raman signal. The linewidth of the GaAs LO-phonon Raman signals and the magnitude of photoacoustic signals were sensitive to strains near the interface due to the lattice mismatch between ZnSSe and GaAs. This technique provides microscopic understanding of the disorders and strains in lattice-mismatched semiconductor heterostructures.
AB - A new experimental and analytical method was demonstrated for the quantitative evaluation of disorder and strains in ZnSxSe1-x/GaAs heterostructures. The alloy disorder and the average size of ZnSe microclusters in epitaxial ZnSxSe1-x films were estimated from the linewidth of the ZnSe-like LO-phonon Raman signal. The linewidth of the GaAs LO-phonon Raman signals and the magnitude of photoacoustic signals were sensitive to strains near the interface due to the lattice mismatch between ZnSSe and GaAs. This technique provides microscopic understanding of the disorders and strains in lattice-mismatched semiconductor heterostructures.
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U2 - 10.1016/0022-0248(92)90766-C
DO - 10.1016/0022-0248(92)90766-C
M3 - Article
AN - SCOPUS:0027108276
SN - 0022-0248
VL - 117
SP - 316
EP - 319
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
IS - 1-4
ER -