TY - JOUR
T1 - Residual stress in Ni-Mn-Ga thin films deposited on different substrates
AU - Doyle, S.
AU - Chernenko, V. A.
AU - Besseghini, S.
AU - Gambardella, A.
AU - Kohl, M.
AU - Müllner, P.
AU - Ohtsuka, M.
N1 - Funding Information:
VAC and AG are grateful to Fondazione Cariplo (project 2004.1819-A10.9251) for financial support. The ANKA synchrotron at Forschungszentrum Karlsruhe is acknowledged for providing financial support and beam time in a framework of project MNT-33. PM acknowledges partial support through DARPA contract N66001-01-C-80345. The authors thank Markus Chmielus for EDS measurements.
PY - 2008/5
Y1 - 2008/5
N2 - Four series of Ni51.4Mn28.3Ga20.3/ substrate thin film composites, where the substrate is either Si(100), MgO(100), alumina or Mo foil, and two series of Ni53.5 Mn23.8Ga22.7/substrate composites where the substrate is either alumina or Mo foil, with different film thicknesses varying from 0.1 to 5 μm have been studied in the cubic phase by XRD stress measurements. The values of residual stresses are found to be dependent on both substrate and film thickness. In the submicron range, a correlation between thickness dependencies of residual stress and transformation temperatures is experimentally obtained. The temperature dependence of the d-spacing d220 is studied for the films deposited on Si(100).
AB - Four series of Ni51.4Mn28.3Ga20.3/ substrate thin film composites, where the substrate is either Si(100), MgO(100), alumina or Mo foil, and two series of Ni53.5 Mn23.8Ga22.7/substrate composites where the substrate is either alumina or Mo foil, with different film thicknesses varying from 0.1 to 5 μm have been studied in the cubic phase by XRD stress measurements. The values of residual stresses are found to be dependent on both substrate and film thickness. In the submicron range, a correlation between thickness dependencies of residual stress and transformation temperatures is experimentally obtained. The temperature dependence of the d-spacing d220 is studied for the films deposited on Si(100).
UR - http://www.scopus.com/inward/record.url?scp=43049149429&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=43049149429&partnerID=8YFLogxK
U2 - 10.1140/epjst/e2008-00660-8
DO - 10.1140/epjst/e2008-00660-8
M3 - Article
AN - SCOPUS:43049149429
SN - 1951-6355
VL - 158
SP - 99
EP - 105
JO - European Physical Journal: Special Topics
JF - European Physical Journal: Special Topics
IS - 1
ER -