Resistance Measurement Platform for Statistical Analysis of Emerging Memory Materials

Takeru Maeda; Yuya Omura; Rihito Kuroda; Akinobu Teramoto; Tomoyuki Suwa; Shigetoshi Sugawa

doi:10.1109/TSM.2020.2983100

Resistance Measurement Platform for Statistical Analysis of Emerging Memory Materials

Takeru Maeda, Yuya Omura, Rihito Kuroda, Akinobu Teramoto, Tomoyuki Suwa, Shigetoshi Sugawa

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

A resistance measurement platform for the statistical evaluation of emerging memory materials is presented. We developed two types of platforms, depending on the resistance range of memory materials. The high resistance (HR) measurement typemeasures the resistance of 490,000 cells in the range of 2.85 text{k}{Omega }- 10,,text{M}{Omega } within 497 ms. The low resistance (LR)measurement type measures the resistance of 10,000 cells in the range of 390,,{Omega }- 10,,text{M}{Omega } within11 ms. Various memory materials can be commonly tested only by forming materials on top of the platform. We measured the resistance of N⁺Poly-Si resistors formed by the platform fabrication process to verify the circuit operation. We also measured the on-resistance of selectors (R_ON) by shorting each cell to GND for the confirmation of the background resistance. Moreover, we formed {alpha } -Si on the platform by PE-CVD to test the process of forming materials on the platform. Then the resistance of {boldsymbol{alpha }} -Si and its temporal variation showing random telegraph noise behaviors were measured statistically.

Original language	English
Article number	9047978
Pages (from-to)	232-239
Number of pages	8
Journal	IEEE Transactions on Semiconductor Manufacturing
Volume	33
Issue number	2
DOIs	https://doi.org/10.1109/TSM.2020.2983100
Publication status	Published - 2020 May

Keywords

Resistance
measurement
memory testing

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Industrial and Manufacturing Engineering
Electrical and Electronic Engineering

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10.1109/TSM.2020.2983100

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title = "Resistance Measurement Platform for Statistical Analysis of Emerging Memory Materials",

abstract = "A resistance measurement platform for the statistical evaluation of emerging memory materials is presented. We developed two types of platforms, depending on the resistance range of memory materials. The high resistance (HR) measurement typemeasures the resistance of 490,000 cells in the range of 2.85 text{k}{Omega }- 10,,text{M}{Omega } within 497 ms. The low resistance (LR)measurement type measures the resistance of 10,000 cells in the range of 390,,{Omega }- 10,,text{M}{Omega } within11 ms. Various memory materials can be commonly tested only by forming materials on top of the platform. We measured the resistance of N+Poly-Si resistors formed by the platform fabrication process to verify the circuit operation. We also measured the on-resistance of selectors (RON) by shorting each cell to GND for the confirmation of the background resistance. Moreover, we formed {alpha } -Si on the platform by PE-CVD to test the process of forming materials on the platform. Then the resistance of {boldsymbol{alpha }} -Si and its temporal variation showing random telegraph noise behaviors were measured statistically.",

keywords = "Resistance, measurement, memory testing",

author = "Takeru Maeda and Yuya Omura and Rihito Kuroda and Akinobu Teramoto and Tomoyuki Suwa and Shigetoshi Sugawa",

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AU - Sugawa, Shigetoshi

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Resistance Measurement Platform for Statistical Analysis of Emerging Memory Materials

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Keywords

ASJC Scopus subject areas

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