Resistance ridges along filling factor ν = 4i in SiO2/Si/ SiO2 quantum wells

K. Takashina; M. Brun; T. Ota; D. K. Maude; A. Fujiwara; Y. Ono; H. Inokawa; Y. Hirayama

doi:10.1063/1.2730046

Resistance ridges along filling factor ν = 4i in SiO₂/Si/ SiO₂ quantum wells

K. Takashina, M. Brun, T. Ota, D. K. Maude, A. Fujiwara, Y. Ono, H. Inokawa, Y. Hirayama

Center for Science and Innovation in Spintronics (CSIS)

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

We examine Landau level coincidences in SiO₂/Si(100)/SiO ₂ quantum wells. Surprisingly, under certain conditions of apparent multiple degeneracy, our data reveal strikingly novel behavior where the resistance is elevated at filling factors that are integer multiples of 4. This structure persists when underlying single particle energies are swept leading to resistance ridges running along v = 4i. The data suggest a new type of many-body effect due to the combined degeneracy of valley and spin.

Original language	English
Title of host publication	Physics of Semiconductors - 28th International Conference on the Physics of Semiconductors, ICPS 2006, Part A and B
Pages	625-626
Number of pages	2
DOIs	https://doi.org/10.1063/1.2730046
Publication status	Published - 2007
Event	28th International Conference on the Physics of Semiconductors, ICPS 2006 - Vienna, Austria Duration: 2006 Jul 24 → 2006 Jul 28

Publication series

Name	AIP Conference Proceedings
Volume	893
ISSN (Print)	0094-243X
ISSN (Electronic)	1551-7616

Conference

Conference	28th International Conference on the Physics of Semiconductors, ICPS 2006
Country/Territory	Austria
City	Vienna
Period	06/7/24 → 06/7/28

Keywords

Coincidence
Landau levels
Magnetotransport
Valley degeneracy

Access to Document

10.1063/1.2730046

Cite this

Takashina, K., Brun, M., Ota, T., Maude, D. K., Fujiwara, A., Ono, Y., Inokawa, H., & Hirayama, Y. (2007). Resistance ridges along filling factor ν = 4i in SiO₂/Si/ SiO₂ quantum wells. In Physics of Semiconductors - 28th International Conference on the Physics of Semiconductors, ICPS 2006, Part A and B (pp. 625-626). (AIP Conference Proceedings; Vol. 893). https://doi.org/10.1063/1.2730046

@inproceedings{c49d7d35782e4d268b63650cf13af7a9,

title = "Resistance ridges along filling factor ν = 4i in SiO2/Si/ SiO2 quantum wells",

abstract = "We examine Landau level coincidences in SiO2/Si(100)/SiO 2 quantum wells. Surprisingly, under certain conditions of apparent multiple degeneracy, our data reveal strikingly novel behavior where the resistance is elevated at filling factors that are integer multiples of 4. This structure persists when underlying single particle energies are swept leading to resistance ridges running along v = 4i. The data suggest a new type of many-body effect due to the combined degeneracy of valley and spin.",

keywords = "Coincidence, Landau levels, Magnetotransport, Valley degeneracy",

author = "K. Takashina and M. Brun and T. Ota and Maude, {D. K.} and A. Fujiwara and Y. Ono and H. Inokawa and Y. Hirayama",

year = "2007",

doi = "10.1063/1.2730046",

language = "English",

isbn = "9780735403970",

series = "AIP Conference Proceedings",

pages = "625--626",

booktitle = "Physics of Semiconductors - 28th International Conference on the Physics of Semiconductors, ICPS 2006, Part A and B",

note = "28th International Conference on the Physics of Semiconductors, ICPS 2006 ; Conference date: 24-07-2006 Through 28-07-2006",

}

Takashina, K, Brun, M, Ota, T, Maude, DK, Fujiwara, A, Ono, Y, Inokawa, H & Hirayama, Y 2007, Resistance ridges along filling factor ν = 4i in SiO₂/Si/ SiO₂ quantum wells. in Physics of Semiconductors - 28th International Conference on the Physics of Semiconductors, ICPS 2006, Part A and B. AIP Conference Proceedings, vol. 893, pp. 625-626, 28th International Conference on the Physics of Semiconductors, ICPS 2006, Vienna, Austria, 06/7/24. https://doi.org/10.1063/1.2730046

Resistance ridges along filling factor ν = 4i in SiO₂/Si/ SiO₂ quantum wells. / Takashina, K.; Brun, M.; Ota, T. et al.
Physics of Semiconductors - 28th International Conference on the Physics of Semiconductors, ICPS 2006, Part A and B. 2007. p. 625-626 (AIP Conference Proceedings; Vol. 893).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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T1 - Resistance ridges along filling factor ν = 4i in SiO2/Si/ SiO2 quantum wells

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AU - Brun, M.

AU - Ota, T.

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AU - Fujiwara, A.

AU - Ono, Y.

AU - Inokawa, H.

AU - Hirayama, Y.

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N2 - We examine Landau level coincidences in SiO2/Si(100)/SiO 2 quantum wells. Surprisingly, under certain conditions of apparent multiple degeneracy, our data reveal strikingly novel behavior where the resistance is elevated at filling factors that are integer multiples of 4. This structure persists when underlying single particle energies are swept leading to resistance ridges running along v = 4i. The data suggest a new type of many-body effect due to the combined degeneracy of valley and spin.

AB - We examine Landau level coincidences in SiO2/Si(100)/SiO 2 quantum wells. Surprisingly, under certain conditions of apparent multiple degeneracy, our data reveal strikingly novel behavior where the resistance is elevated at filling factors that are integer multiples of 4. This structure persists when underlying single particle energies are swept leading to resistance ridges running along v = 4i. The data suggest a new type of many-body effect due to the combined degeneracy of valley and spin.

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