Resistance switching and formation of a conductive bridge in metal/binary oxide/metal structure for memory devices

Kohei Fujiwara; Takumi Nemoto; Marcelo J. Rozenberg; Yoshinobu Nakamura; Hidenori Takagi

doi:10.1143/JJAP.47.6266

Resistance switching and formation of a conductive bridge in metal/binary oxide/metal structure for memory devices

Kohei Fujiwara, Takumi Nemoto, Marcelo J. Rozenberg, Yoshinobu Nakamura, Hidenori Takagi

Research output: Contribution to journal › Article › peer-review

137 Citations (Scopus)

Abstract

The resistance switching mechanism of a metal/CuO/metal sandwich with a planar device structure has been studied. We report the direct observation of a conducting bridge within the CuO channel of the device, which is formed upon the initial voltage application (forming process). It is found that the resistance switching phenomenon only occurs when just a single bridge is formed during a soft dielectric breakdown. We argue that the reduction and oxidation of this conducting bridge by the action of an applied field and/or current gives rise to a novel nonvolatile memory effect.

Original language	English
Pages (from-to)	6266-6271
Number of pages	6
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	47
Issue number	8 PART 1
DOIs	https://doi.org/10.1143/JJAP.47.6266
Publication status	Published - 2008 Aug 8
Externally published	Yes

Keywords

CuO
Dielectric breakdown
Memory effect
ReRAM
Reduction-oxidation
Resistance switching

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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10.1143/JJAP.47.6266

Cite this

Resistance switching and formation of a conductive bridge in metal/binary oxide/metal structure for memory devices. / Fujiwara, Kohei; Nemoto, Takumi; Rozenberg, Marcelo J. et al.
In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 47, No. 8 PART 1, 08.08.2008, p. 6266-6271.

Research output: Contribution to journal › Article › peer-review

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AU - Takagi, Hidenori

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AB - The resistance switching mechanism of a metal/CuO/metal sandwich with a planar device structure has been studied. We report the direct observation of a conducting bridge within the CuO channel of the device, which is formed upon the initial voltage application (forming process). It is found that the resistance switching phenomenon only occurs when just a single bridge is formed during a soft dielectric breakdown. We argue that the reduction and oxidation of this conducting bridge by the action of an applied field and/or current gives rise to a novel nonvolatile memory effect.

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KW - Memory effect

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KW - Reduction-oxidation

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Resistance switching and formation of a conductive bridge in metal/binary oxide/metal structure for memory devices

Abstract

Keywords

ASJC Scopus subject areas

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