Resistive non-volatile memories fabricated with poly(vinylidene fluoride)/poly(thiophene) blend nanosheets

Huie Zhu; Shunsuke Yamamoto; Jun Matsui; Tokuji Miyashita; Masaya Mitsuishi

doi:10.1039/c8ra01143e

Resistive non-volatile memories fabricated with poly(vinylidene fluoride)/poly(thiophene) blend nanosheets

Huie Zhu, Shunsuke Yamamoto, Jun Matsui, Tokuji Miyashita, Masaya Mitsuishi

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

Ferroelectric poly(vinylidene fluoride)/semiconductive polythiophene (P3CPenT) blend monolayers were developed at varying blend ratios using the Langmuir-Blodgett technique. The multilayered blend nanosheets show much improved surface roughness that is more applicable for electronics applications than spin-cast films. Because of the precisely controllable bottom-up construction, semiconductive P3CPenT were well dispersed into the ferroelectric PVDF matrix. Moreover, the ferroelectric matrix contains almost 100% β crystals: a polar crystal phase responsible for the ferroelectricity of PVDF. Both the good dispersion of semiconductive P3CPenT and the outstanding ferroelectricity of the PVDF matrix in the blend nanosheets guaranteed the success of ferroelectric organic non-volatile memories based on ferroelectricity-manipulated resistive switching with a fresh high ON/OFF ratio and long endurance to 30 days.

Original language	English
Pages (from-to)	7963-7968
Number of pages	6
Journal	RSC Advances
Volume	8
Issue number	15
DOIs	https://doi.org/10.1039/c8ra01143e
Publication status	Published - 2018

ASJC Scopus subject areas

Chemistry(all)
Chemical Engineering(all)

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title = "Resistive non-volatile memories fabricated with poly(vinylidene fluoride)/poly(thiophene) blend nanosheets",

abstract = "Ferroelectric poly(vinylidene fluoride)/semiconductive polythiophene (P3CPenT) blend monolayers were developed at varying blend ratios using the Langmuir-Blodgett technique. The multilayered blend nanosheets show much improved surface roughness that is more applicable for electronics applications than spin-cast films. Because of the precisely controllable bottom-up construction, semiconductive P3CPenT were well dispersed into the ferroelectric PVDF matrix. Moreover, the ferroelectric matrix contains almost 100% β crystals: a polar crystal phase responsible for the ferroelectricity of PVDF. Both the good dispersion of semiconductive P3CPenT and the outstanding ferroelectricity of the PVDF matrix in the blend nanosheets guaranteed the success of ferroelectric organic non-volatile memories based on ferroelectricity-manipulated resistive switching with a fresh high ON/OFF ratio and long endurance to 30 days.",

author = "Huie Zhu and Shunsuke Yamamoto and Jun Matsui and Tokuji Miyashita and Masaya Mitsuishi",

note = "Funding Information: The work was supported by Grants-in-Aid for Scientic Research (B) (24350112) and for Young Scientists (16K17953) from the Japan Society for the Promotion of Science (JSPS). The work was also supported by the Research Program of “Dynamic Alliance for Open Innovation Bridging Human, Environment and Materials” in “Network Joint Research Center for Materials and Devices”. H. Zhu appreciates nancial support from the Tohoku University Center for Gender Equality Promotion (TUMUG). Furthermore, the authors are grateful to Professor Hidetoshi Oikawa, IMRAM, Tohoku University, for the use of an X-ray diffractometer. Acknowledgment is also made of the Central Analytical Facility of IMRAM for providing the AFM instrument. Publisher Copyright: {\textcopyright} The Royal Society of Chemistry 2018.",

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AU - Zhu, Huie

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AU - Mitsuishi, Masaya

N1 - Funding Information: The work was supported by Grants-in-Aid for Scientic Research (B) (24350112) and for Young Scientists (16K17953) from the Japan Society for the Promotion of Science (JSPS). The work was also supported by the Research Program of “Dynamic Alliance for Open Innovation Bridging Human, Environment and Materials” in “Network Joint Research Center for Materials and Devices”. H. Zhu appreciates nancial support from the Tohoku University Center for Gender Equality Promotion (TUMUG). Furthermore, the authors are grateful to Professor Hidetoshi Oikawa, IMRAM, Tohoku University, for the use of an X-ray diffractometer. Acknowledgment is also made of the Central Analytical Facility of IMRAM for providing the AFM instrument. Publisher Copyright: © The Royal Society of Chemistry 2018.

PY - 2018

Y1 - 2018

N2 - Ferroelectric poly(vinylidene fluoride)/semiconductive polythiophene (P3CPenT) blend monolayers were developed at varying blend ratios using the Langmuir-Blodgett technique. The multilayered blend nanosheets show much improved surface roughness that is more applicable for electronics applications than spin-cast films. Because of the precisely controllable bottom-up construction, semiconductive P3CPenT were well dispersed into the ferroelectric PVDF matrix. Moreover, the ferroelectric matrix contains almost 100% β crystals: a polar crystal phase responsible for the ferroelectricity of PVDF. Both the good dispersion of semiconductive P3CPenT and the outstanding ferroelectricity of the PVDF matrix in the blend nanosheets guaranteed the success of ferroelectric organic non-volatile memories based on ferroelectricity-manipulated resistive switching with a fresh high ON/OFF ratio and long endurance to 30 days.

AB - Ferroelectric poly(vinylidene fluoride)/semiconductive polythiophene (P3CPenT) blend monolayers were developed at varying blend ratios using the Langmuir-Blodgett technique. The multilayered blend nanosheets show much improved surface roughness that is more applicable for electronics applications than spin-cast films. Because of the precisely controllable bottom-up construction, semiconductive P3CPenT were well dispersed into the ferroelectric PVDF matrix. Moreover, the ferroelectric matrix contains almost 100% β crystals: a polar crystal phase responsible for the ferroelectricity of PVDF. Both the good dispersion of semiconductive P3CPenT and the outstanding ferroelectricity of the PVDF matrix in the blend nanosheets guaranteed the success of ferroelectric organic non-volatile memories based on ferroelectricity-manipulated resistive switching with a fresh high ON/OFF ratio and long endurance to 30 days.

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Resistive non-volatile memories fabricated with poly(vinylidene fluoride)/poly(thiophene) blend nanosheets

Abstract

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