Resistive switching memory performance in oxide hetero-nanocrystals with well-controlled interfaces

Takafumi Ishibe, Yoshiki Maeda, Tsukasa Terada, Nobuyasu Naruse, Yutaka Mera, Eiichi Kobayashi, Yoshiaki Nakamura

Research output: Contribution to journalArticlepeer-review

25 Citations (Scopus)

Abstract

For realization of new informative systems, the memristor working like synapse has drawn much attention. We developed isolated high-density Fe3O4 nanocrystals on Ge nuclei/Si with uniform and high resistive switching performance using low-temperature growth. The Fe3O4 nanocrystals on Ge nuclei had a well-controlled interface (Fe3O4/GeOx/Ge) composed of high-crystallinity Fe3O4 and high-quality GeOx layers. The nanocrystals showed uniform resistive switching characteristics (high switching probability of ~90%) and relatively high Off/On resistance ratio (~58). The high-quality interface enables electric field application to Fe3O4 and GeOx near the interface, which leads to effective positively charged oxygen vacancy movement, resulting in high-performance resistive switching. Furthermore, we successfully observed memory effect in nanocrystals with well-controlled interface. The experimental confirmation of the memory effect existence even in ultrasmall nanocrystals is significant for realizing non-volatile nanocrystal memory leading to neuromorphic devices.

Original languageEnglish
Pages (from-to)195-204
Number of pages10
JournalScience and Technology of Advanced Materials
Volume21
Issue number1
DOIs
Publication statusPublished - 2020 Jan 31

Keywords

  • 212 Surface and interfaces
  • Memristor
  • germanium
  • interface control
  • iron oxide
  • nanocrystal
  • resistive switching characteristics
  • silicon

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