Resonance tunneling transistors based on C60 encapsulated double-walled carbon nanotubes

Y. F. Li; T. Kaneko; R. Hatakeyama

doi:10.1109/NANO.2007.4601165

Resonance tunneling transistors based on C₆₀ encapsulated double-walled carbon nanotubes

Y. F. Li, T. Kaneko, R. Hatakeyama

ENG - Electronic Engineering

Tohoku University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

We report electrical transport properties of resonance tunneling transistors fabricated using C₆₀-fllled metallic double-walled carbon nanotubes. All the examined devices exhibit a strong negative differential resistance (NDR) behavior, and the high peak-to-valley current ratios more than 10³ are observed at room temperature. More importantly, the observed NDR characteristics remain stable under forward and backward measurements. In addition, it is found that the applied gate voltages exercise a great influence on the peak voltage of NDR.

Original language	English
Title of host publication	2007 7th IEEE International Conference on Nanotechnology - IEEE-NANO 2007, Proceedings
Pages	175-179
Number of pages	5
DOIs	https://doi.org/10.1109/NANO.2007.4601165
Publication status	Published - 2007
Event	2007 7th IEEE International Conference on Nanotechnology - IEEE-NANO 2007 - Hong Kong, China Duration: 2007 Aug 2 → 2007 Aug 5

Publication series

Name	2007 7th IEEE International Conference on Nanotechnology - IEEE-NANO 2007, Proceedings

Conference

Conference	2007 7th IEEE International Conference on Nanotechnology - IEEE-NANO 2007
Country/Territory	China
City	Hong Kong
Period	07/8/2 → 07/8/5

Keywords

Carbon nanotubes
Encapsulation
Fullerene
Negative differential resistance

Access to Document

10.1109/NANO.2007.4601165

Cite this

Li, Y. F., Kaneko, T., & Hatakeyama, R. (2007). Resonance tunneling transistors based on C₆₀ encapsulated double-walled carbon nanotubes. In 2007 7th IEEE International Conference on Nanotechnology - IEEE-NANO 2007, Proceedings (pp. 175-179). Article 4601165 (2007 7th IEEE International Conference on Nanotechnology - IEEE-NANO 2007, Proceedings). https://doi.org/10.1109/NANO.2007.4601165

@inproceedings{03204d785ceb4651b554733c90d7785c,

title = "Resonance tunneling transistors based on C60 encapsulated double-walled carbon nanotubes",

abstract = "We report electrical transport properties of resonance tunneling transistors fabricated using C60-fllled metallic double-walled carbon nanotubes. All the examined devices exhibit a strong negative differential resistance (NDR) behavior, and the high peak-to-valley current ratios more than 103 are observed at room temperature. More importantly, the observed NDR characteristics remain stable under forward and backward measurements. In addition, it is found that the applied gate voltages exercise a great influence on the peak voltage of NDR.",

keywords = "Carbon nanotubes, Encapsulation, Fullerene, Negative differential resistance",

author = "Li, {Y. F.} and T. Kaneko and R. Hatakeyama",

year = "2007",

doi = "10.1109/NANO.2007.4601165",

language = "English",

isbn = "1424406080",

series = "2007 7th IEEE International Conference on Nanotechnology - IEEE-NANO 2007, Proceedings",

pages = "175--179",

booktitle = "2007 7th IEEE International Conference on Nanotechnology - IEEE-NANO 2007, Proceedings",

note = "2007 7th IEEE International Conference on Nanotechnology - IEEE-NANO 2007 ; Conference date: 02-08-2007 Through 05-08-2007",

}

Li, YF, Kaneko, T & Hatakeyama, R 2007, Resonance tunneling transistors based on C₆₀ encapsulated double-walled carbon nanotubes. in 2007 7th IEEE International Conference on Nanotechnology - IEEE-NANO 2007, Proceedings., 4601165, 2007 7th IEEE International Conference on Nanotechnology - IEEE-NANO 2007, Proceedings, pp. 175-179, 2007 7th IEEE International Conference on Nanotechnology - IEEE-NANO 2007, Hong Kong, China, 07/8/2. https://doi.org/10.1109/NANO.2007.4601165

Resonance tunneling transistors based on C₆₀ encapsulated double-walled carbon nanotubes. / Li, Y. F.; Kaneko, T.; Hatakeyama, R.
2007 7th IEEE International Conference on Nanotechnology - IEEE-NANO 2007, Proceedings. 2007. p. 175-179 4601165 (2007 7th IEEE International Conference on Nanotechnology - IEEE-NANO 2007, Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Resonance tunneling transistors based on C60 encapsulated double-walled carbon nanotubes

AU - Li, Y. F.

AU - Kaneko, T.

AU - Hatakeyama, R.

PY - 2007

Y1 - 2007

N2 - We report electrical transport properties of resonance tunneling transistors fabricated using C60-fllled metallic double-walled carbon nanotubes. All the examined devices exhibit a strong negative differential resistance (NDR) behavior, and the high peak-to-valley current ratios more than 103 are observed at room temperature. More importantly, the observed NDR characteristics remain stable under forward and backward measurements. In addition, it is found that the applied gate voltages exercise a great influence on the peak voltage of NDR.

AB - We report electrical transport properties of resonance tunneling transistors fabricated using C60-fllled metallic double-walled carbon nanotubes. All the examined devices exhibit a strong negative differential resistance (NDR) behavior, and the high peak-to-valley current ratios more than 103 are observed at room temperature. More importantly, the observed NDR characteristics remain stable under forward and backward measurements. In addition, it is found that the applied gate voltages exercise a great influence on the peak voltage of NDR.

KW - Carbon nanotubes

KW - Encapsulation

KW - Fullerene

KW - Negative differential resistance

UR - http://www.scopus.com/inward/record.url?scp=52949093575&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=52949093575&partnerID=8YFLogxK

U2 - 10.1109/NANO.2007.4601165

DO - 10.1109/NANO.2007.4601165

M3 - Conference contribution

AN - SCOPUS:52949093575

SN - 1424406080

SN - 9781424406081

T3 - 2007 7th IEEE International Conference on Nanotechnology - IEEE-NANO 2007, Proceedings

SP - 175

EP - 179

BT - 2007 7th IEEE International Conference on Nanotechnology - IEEE-NANO 2007, Proceedings

T2 - 2007 7th IEEE International Conference on Nanotechnology - IEEE-NANO 2007

Y2 - 2 August 2007 through 5 August 2007

ER -