TY - GEN
T1 - Resonant energy transfer due to exciton coupling in hybrid persovskites conjugated to GaN semiconductors
AU - Jianyou, Li
AU - Neogi, Arup
AU - Ishihara, Teruya
PY - 2006/12/1
Y1 - 2006/12/1
N2 - Exciton-Exciton coupling in hybrid persovskites conjugated to GaN semiconductors system has been studied. Excitons are strongly coupled in (C 6H5C2H4NH3) 2PbI4[bis(phenethyl-ammonium)tetraiodoplumbatel] (PEPI) which is a hybrid inorganic-organic layered, with a perovskite structure quantum well (QW). The inorganic PbI4 monolayer is sandwiched between organic layers. The interaction between electron and hole forming the bound exciton is significantly stronger due to dielectric confinement. The lowest exciton binding energy is 220 meV, which is 20 times in comparison to GaAs. Gallium nitride (GaN) semiconductor has defect bound excitons with absorption band, which overlaps with the emission spectra of the PEPI system. This facilitates resonant energy transfer (RET) from the GaN defect bound exciton states to the excitons confined in the PEPI layer. We investigated the interaction by photoluminescence (PL) and found that 1s exciton in the PEPI layer strongly couples with the GaN defect level exciton, which is pronounced at lower temperature (< - 100 K).
AB - Exciton-Exciton coupling in hybrid persovskites conjugated to GaN semiconductors system has been studied. Excitons are strongly coupled in (C 6H5C2H4NH3) 2PbI4[bis(phenethyl-ammonium)tetraiodoplumbatel] (PEPI) which is a hybrid inorganic-organic layered, with a perovskite structure quantum well (QW). The inorganic PbI4 monolayer is sandwiched between organic layers. The interaction between electron and hole forming the bound exciton is significantly stronger due to dielectric confinement. The lowest exciton binding energy is 220 meV, which is 20 times in comparison to GaAs. Gallium nitride (GaN) semiconductor has defect bound excitons with absorption band, which overlaps with the emission spectra of the PEPI system. This facilitates resonant energy transfer (RET) from the GaN defect bound exciton states to the excitons confined in the PEPI layer. We investigated the interaction by photoluminescence (PL) and found that 1s exciton in the PEPI layer strongly couples with the GaN defect level exciton, which is pronounced at lower temperature (< - 100 K).
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M3 - Conference contribution
AN - SCOPUS:40949115541
SN - 9781604234114
T3 - Materials Research Society Symposium Proceedings
SP - 241
EP - 244
BT - Advances in III-V Nitride Semiconductor Materials and Devices
T2 - 2006 MRS Fall Meeting
Y2 - 27 November 2006 through 29 November 2006
ER -