Resonant energy transfer due to exciton coupling in hybrid persovskites conjugated to GaN semiconductors

Li Jianyou, Arup Neogi, Teruya Ishihara

Research output: Chapter in Book/Report/Conference proceedingConference contribution


Exciton-Exciton coupling in hybrid persovskites conjugated to GaN semiconductors system has been studied. Excitons are strongly coupled in (C 6H5C2H4NH3) 2PbI4[bis(phenethyl-ammonium)tetraiodoplumbatel] (PEPI) which is a hybrid inorganic-organic layered, with a perovskite structure quantum well (QW). The inorganic PbI4 monolayer is sandwiched between organic layers. The interaction between electron and hole forming the bound exciton is significantly stronger due to dielectric confinement. The lowest exciton binding energy is 220 meV, which is 20 times in comparison to GaAs. Gallium nitride (GaN) semiconductor has defect bound excitons with absorption band, which overlaps with the emission spectra of the PEPI system. This facilitates resonant energy transfer (RET) from the GaN defect bound exciton states to the excitons confined in the PEPI layer. We investigated the interaction by photoluminescence (PL) and found that 1s exciton in the PEPI layer strongly couples with the GaN defect level exciton, which is pronounced at lower temperature (< - 100 K).

Original languageEnglish
Title of host publicationAdvances in III-V Nitride Semiconductor Materials and Devices
Number of pages4
Publication statusPublished - 2006 Dec 1
Externally publishedYes
Event2006 MRS Fall Meeting - Boston, MA, United States
Duration: 2006 Nov 272006 Nov 29

Publication series

NameMaterials Research Society Symposium Proceedings
ISSN (Print)0272-9172


Other2006 MRS Fall Meeting
Country/TerritoryUnited States
CityBoston, MA

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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