Abstract
The low-temperature (T=1.4 K) tunneling current of GaSb-AlSb-InAs-AlSb-GaSb heterostructures has shown sharp negative-differential-resistance features induced by a magnetic field parallel to the current. In addition, the zero-voltage tunneling conductance vanished at certain fields, in close analogy with the behavior of the in-plane conductance in the quantum-Hall-effect regime. These results, which strongly differ from similar experiments in GaAs-Ga1-xAlxAs resonant-tunneling diodes, are explained in terms of resonant interband tunneling of GaSb holes through Landau levels in the conduction band of the InAs quantum well.
| Original language | English |
|---|---|
| Pages (from-to) | 5196-5199 |
| Number of pages | 4 |
| Journal | Physical Review B |
| Volume | 43 |
| Issue number | 6 |
| DOIs | |
| Publication status | Published - 1991 |
| Externally published | Yes |
ASJC Scopus subject areas
- Condensed Matter Physics