Resonant interband tunneling via Landau levels in polytype heterostructures

E. E. Mendez, H. Ohno, L. Esaki, W. I. Wang

Research output: Contribution to journalArticlepeer-review

56 Citations (Scopus)


The low-temperature (T=1.4 K) tunneling current of GaSb-AlSb-InAs-AlSb-GaSb heterostructures has shown sharp negative-differential-resistance features induced by a magnetic field parallel to the current. In addition, the zero-voltage tunneling conductance vanished at certain fields, in close analogy with the behavior of the in-plane conductance in the quantum-Hall-effect regime. These results, which strongly differ from similar experiments in GaAs-Ga1-xAlxAs resonant-tunneling diodes, are explained in terms of resonant interband tunneling of GaSb holes through Landau levels in the conduction band of the InAs quantum well.

Original languageEnglish
Pages (from-to)5196-5199
Number of pages4
JournalPhysical Review B
Issue number6
Publication statusPublished - 1991
Externally publishedYes

ASJC Scopus subject areas

  • Condensed Matter Physics


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