Resonant terahertz detection antenna utilizing plasma oscillations in lateral schottky diode

The terahertz (THz) resonant detectors based on 2DEG channels with lateral Schottky junctions (LSJ) by accounting for the effects of the contact pads serving as an antenna are discussed. These devices have the structures similar to high-electron-mobility transistors except that they have LSJs at either source or drain contacts. Plasma oscillations in the channels are excited by THz signals supplied by external antennas or coupled through the contact pads. The THz signals induce rectified currents due to the nonlinear current-voltage characteristics at LSJ. Detected signals can be resonantly large when the frequency of signals is close to one of the resonant plasma frequencies, which can be in the THz range for the submicrometer channel with sufficiently large electron concentration. The lateral Schottky diode antenna has the first peak with smaller resonant frequency compared with the responsivity of the lateral Schottky diode connected with an external antenna.