Abstract
An oxygen sensor with a Ag·YSZ (ZrO2-8 mol%Y2O3) composite thin film electrode deposited on a YSZ disk by ion-beam-sputtering (IBS) was developed. Compositions of the thin films tested were Ag-10 mol%YSZ and Ag-30 mol%YSZ. The performance of the oxygen sensors was examined at temperatures between 573 and 673 K. The mechanism of electrode reactions was inferred on the basis of the results obtained by an AC impedance method. The oxygen sensor with the Ag.YSZ composite thin film electrodes showed the Nernstian response in 1.0% oxygen at temperatures higher than 593 K. The lowest temperature for the Nernstian response was lower by 25 K than that reported for the sensor with a Ag thin film electrode. After a change in oxygen concentration, the response time of the sensor with the Ag-10 mol%YSZ electrode was shorter than that with the Ag-30 mol%YSZ electrode.
| Original language | English |
|---|---|
| Pages (from-to) | 916-921 |
| Number of pages | 6 |
| Journal | Nippon Kinzoku Gakkaishi/Journal of the Japan Institute of Metals |
| Volume | 65 |
| Issue number | 10 |
| DOIs | |
| Publication status | Published - 2001 |
Keywords
- Ag·YSZ composite thin film
- Ion-beam-sputter deposition
- Nernstian response
- Oyxgen sensor
- Response time
- Yttria stabilized zirconia
ASJC Scopus subject areas
- Condensed Matter Physics
- Mechanics of Materials
- Metals and Alloys
- Materials Chemistry