Reverse bias annealing effects in N-polar GaN/AlGaN metal-insulator-semiconductor high electron mobility transistors

Physics

• High Electron Mobility Transistors 100%
• Semiconductor 16%
• Insulators 16%
• Electrodes 16%
• Annealing Effect 16%
• Region 16%
• Stability 16%
• Calculation 16%
• Quality 16%
• Metal 16%

Chemistry

• Electron Particle 50%
• Current Density 16%
• Semiconductor 16%
• Nonconductor 16%
• Metal 16%
• Drain Current 16%
• Resistance 16%

Material Science

• Semiconductor Material 16%