TY - JOUR
T1 - Reverse-tone ultraviolet nanoimprint lithography with fluorescent UV-curable resins
AU - Uehara, Takuya
AU - Kubo, Shoichi
AU - Nakagawa, Masaru
N1 - Publisher Copyright:
© 2015 The Japan Society of Applied Physics.
PY - 2015/6/1
Y1 - 2015/6/1
N2 - The usefulness of fluorescent ultraviolet (UV)-curable resins for reverse-tone UV nanoimprint lithography was demonstrated. Nanoimprinted concave patterns were fabricated as an underlayer on a Au-deposited substrate using a fluorescent UV-curable resin with a low etching durability after curing. The underlayer was coated with another fluorescent UV-curable resin with a high etching durability after curing. Fluorescence microscopic observation allowed the inspection of the morphological uniformity and thickness of both under and top layers in a nondestructive manner. UV-curing of the top layer in combination with pressing with a flat substrate was necessary for obtaining a flattened top layer surface, which was responsible for allowing the reverse-tone UV nanoimprint lithography. We demonstrated the fabrication of 10-nm-thick Au split-ring resonator structures with a line width of 55 ± 4 nm corresponding to the underlayer concave resist patterns by dry etching during Ar ion milling under the condition that the etching rate ratio of the underlayer to the top layer was 6.
AB - The usefulness of fluorescent ultraviolet (UV)-curable resins for reverse-tone UV nanoimprint lithography was demonstrated. Nanoimprinted concave patterns were fabricated as an underlayer on a Au-deposited substrate using a fluorescent UV-curable resin with a low etching durability after curing. The underlayer was coated with another fluorescent UV-curable resin with a high etching durability after curing. Fluorescence microscopic observation allowed the inspection of the morphological uniformity and thickness of both under and top layers in a nondestructive manner. UV-curing of the top layer in combination with pressing with a flat substrate was necessary for obtaining a flattened top layer surface, which was responsible for allowing the reverse-tone UV nanoimprint lithography. We demonstrated the fabrication of 10-nm-thick Au split-ring resonator structures with a line width of 55 ± 4 nm corresponding to the underlayer concave resist patterns by dry etching during Ar ion milling under the condition that the etching rate ratio of the underlayer to the top layer was 6.
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U2 - 10.7567/JJAP.54.06FM02
DO - 10.7567/JJAP.54.06FM02
M3 - Article
AN - SCOPUS:84930717253
SN - 0021-4922
VL - 54
JO - Japanese Journal of Applied Physics
JF - Japanese Journal of Applied Physics
IS - 6
M1 - 06FM02
ER -