Reversible and irreversible degradation attributing to oxygen vacancy in HfSiON gate films during electrical stress application

Ryu Hasunuma; Chihiro Tamura; Tsuyoshi Nomura; Yuuki Kikuchi; Kenji Ohmori; Motoyuki Sato; Akira Uedono; Toyohiro Chikyow; Kenji Shiraishi; Keisaku Yamada; Kikuo Yamabe

doi:10.1109/IEDM.2009.5424405

Reversible and irreversible degradation attributing to oxygen vacancy in HfSiON gate films during electrical stress application

Ryu Hasunuma, Chihiro Tamura, Tsuyoshi Nomura, Yuuki Kikuchi, Kenji Ohmori, Motoyuki Sato, Akira Uedono, Toyohiro Chikyow, Kenji Shiraishi, Keisaku Yamada, Kikuo Yamabe

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

The dielectric degradation under electrical stress application was attributed to generation of oxygen vacancy, and structural transformation in HfSiON films, in addition to widely known charge trapping. The former two result from ion drift under electrical field due to its ionic character of Hf-based dielectrics. While V_o generation and charge trapping are atomic-range phenomena, it is surprising that long-range structural transformation can also occur under electrical filed before dielectric breakdown even at room temperature.

Original language	English
Title of host publication	2009 International Electron Devices Meeting, IEDM 2009 - Technical Digest
DOIs	https://doi.org/10.1109/IEDM.2009.5424405
Publication status	Published - 2009 Dec 1
Externally published	Yes
Event	2009 International Electron Devices Meeting, IEDM 2009 - Baltimore, MD, United States Duration: 2009 Dec 7 → 2009 Dec 9

Publication series

Name	Technical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)	0163-1918

Other

Other	2009 International Electron Devices Meeting, IEDM 2009
Country/Territory	United States
City	Baltimore, MD
Period	09/12/7 → 09/12/9

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1109/IEDM.2009.5424405

Cite this

Hasunuma, R., Tamura, C., Nomura, T., Kikuchi, Y., Ohmori, K., Sato, M., Uedono, A., Chikyow, T., Shiraishi, K., Yamada, K., & Yamabe, K. (2009). Reversible and irreversible degradation attributing to oxygen vacancy in HfSiON gate films during electrical stress application. In 2009 International Electron Devices Meeting, IEDM 2009 - Technical Digest [5424405] (Technical Digest - International Electron Devices Meeting, IEDM). https://doi.org/10.1109/IEDM.2009.5424405

Reversible and irreversible degradation attributing to oxygen vacancy in HfSiON gate films during electrical stress application. / Hasunuma, Ryu; Tamura, Chihiro; Nomura, Tsuyoshi et al.
2009 International Electron Devices Meeting, IEDM 2009 - Technical Digest. 2009. 5424405 (Technical Digest - International Electron Devices Meeting, IEDM).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Hasunuma, R, Tamura, C, Nomura, T, Kikuchi, Y, Ohmori, K, Sato, M, Uedono, A, Chikyow, T, Shiraishi, K, Yamada, K & Yamabe, K 2009, Reversible and irreversible degradation attributing to oxygen vacancy in HfSiON gate films during electrical stress application. in 2009 International Electron Devices Meeting, IEDM 2009 - Technical Digest., 5424405, Technical Digest - International Electron Devices Meeting, IEDM, 2009 International Electron Devices Meeting, IEDM 2009, Baltimore, MD, United States, 09/12/7. https://doi.org/10.1109/IEDM.2009.5424405

Hasunuma R, Tamura C, Nomura T, Kikuchi Y, Ohmori K, Sato M et al. Reversible and irreversible degradation attributing to oxygen vacancy in HfSiON gate films during electrical stress application. In 2009 International Electron Devices Meeting, IEDM 2009 - Technical Digest. 2009. 5424405. (Technical Digest - International Electron Devices Meeting, IEDM). doi: 10.1109/IEDM.2009.5424405

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AU - Ohmori, Kenji

AU - Sato, Motoyuki

AU - Uedono, Akira

AU - Chikyow, Toyohiro

AU - Shiraishi, Kenji

AU - Yamada, Keisaku

AU - Yamabe, Kikuo

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AB - The dielectric degradation under electrical stress application was attributed to generation of oxygen vacancy, and structural transformation in HfSiON films, in addition to widely known charge trapping. The former two result from ion drift under electrical field due to its ionic character of Hf-based dielectrics. While Vo generation and charge trapping are atomic-range phenomena, it is surprising that long-range structural transformation can also occur under electrical filed before dielectric breakdown even at room temperature.

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Reversible and irreversible degradation attributing to oxygen vacancy in HfSiON gate films during electrical stress application

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