TY - GEN
T1 - Revisiting room-temperature 1.54 μm photoluminescence of ErOx centers in silicon at extremely low concentration
AU - Prati, Enrico
AU - Celebrano, Michele
AU - Ghirardini, Lavinia
AU - Biagioni, Paolo
AU - Finazzi, Marco
AU - Shimizu, Yasuo
AU - Tu, Yuan
AU - Inoue, Koji
AU - Nagai, Yasuyoshi
AU - Shinada, Takahiro
AU - Chiba, Yuki
AU - Abdelghafar, Ayman
AU - Yano, Maasa
AU - Tanii, Takashi
N1 - Funding Information:
E.P. acknowledges JSPS, the Short Term Mobility Program 2015 of CNR and the Short Term Mobility Program 2016 of CNR. This work was supported by a Grant-io-Aid for Basic Research (B) (25289109) from MEXT and Young Scientists (A) (15H05413) from MEXT. The authors thank Manrino Ferrari (CNR-IFN Trento), Giovanni Pellegrini (politecnico di Milano) and Francesco Priolo (Universita di Catania) for useful discussions.
Publisher Copyright:
© 2017 JSAP.
PY - 2017/12/29
Y1 - 2017/12/29
N2 - Luminescence of erbium in silicon has been intensively explored in the past in the high power emission regime, but its employment for manufacturability of active components for silicon photonics proved unfeasible. We explore the room-temperature photoluminescence (PL) at the telecomm wavelength of very low implantation doses of ErOx in Si for accessing few photon regime towards single photon emission. We achieve countable photon regime and we assess the lower-bound number of detectable emission centers by micron scale implanted dots, whose emission is collected by an inverted confocal microscope.
AB - Luminescence of erbium in silicon has been intensively explored in the past in the high power emission regime, but its employment for manufacturability of active components for silicon photonics proved unfeasible. We explore the room-temperature photoluminescence (PL) at the telecomm wavelength of very low implantation doses of ErOx in Si for accessing few photon regime towards single photon emission. We achieve countable photon regime and we assess the lower-bound number of detectable emission centers by micron scale implanted dots, whose emission is collected by an inverted confocal microscope.
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U2 - 10.23919/SNW.2017.8242319
DO - 10.23919/SNW.2017.8242319
M3 - Conference contribution
AN - SCOPUS:85049608019
T3 - 2017 Silicon Nanoelectronics Workshop, SNW 2017
SP - 105
EP - 106
BT - 2017 Silicon Nanoelectronics Workshop, SNW 2017
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 22nd Silicon Nanoelectronics Workshop, SNW 2017
Y2 - 4 June 2017 through 5 June 2017
ER -