RF-MBE growth and structural characterization of cubic InN films on GaAs

T. Nakamura, K. Iida, R. Katayama, T. Yamamoto, K. Onabe

Research output: Contribution to journalArticlepeer-review

17 Citations (Scopus)


c-InN (zincblende structure) films have been successfully grown on GaAs(001) substrates by rf-plasma-assisted molecular beam epitaxy. The X-ray diffraction analysis has confirmed the growth of c-InN films whose growth temperature was 400-550°C. The structural properties (i.e. surface flatness and crystal quality) of the InN films are obviously improved for the growth condition of the near surface-stoichiometry at the In-rich side. By high resolution transmission electron microscopy images and 2Θω X-ray reciprocal space mapping measurements, hexagonal-phase InN (h-InN) is found to be generated from c-InN{111} facets. The volume content of c-InN is estimated to be ∼82% at maximum based on an analysis of the X-ray diffraction intensity.

Original languageEnglish
Pages (from-to)1451-1455
Number of pages5
JournalPhysica Status Solidi (B) Basic Research
Issue number7
Publication statusPublished - 2006 Jun
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics


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