RF-plasma assisted fast atom beam etching

Takahito Ono, Toshiki Simizu, Norimune Orimoto, Seungseoup Lee, Esashi Masayoshi

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Citation (Scopus)


Etching technique with a high selectivity, low damage and high anisotropy has been studied widely to satisfy the requirement for advanced semiconductor devices. It is effective to use neutral atoms as an etching species to prevent various anomaly originated in built-in charge due to ions as it is progressed for further miniaturization and precise dimension control. Also it is necessary to decrease the kinetic energy of the etching species to prevent damage on the etched surface. The low energy etching with neutral species should be necessary to satisfy the above requirement. Although some techniques that use neutral species have been reported, Fast Atom Etching (FAB) is given as one of the technologies. The characteristics are the high neutralization rate and the highly collimation of the atom beam. To sustain the discharge in the source, normally high DC voltage above 1 kV is necessary. In this study we propose RF-assisted-FAB that make it possible to work at a relatively low energy. We report the preliminary results.

Original languageEnglish
Title of host publicationDigest of Papers - 2000 International Microprocesses and Nanotechnology Conference, MNC 2000
PublisherInstitute of Electrical and Electronics Engineers Inc.
Number of pages2
ISBN (Electronic)4891140046, 9784891140045
Publication statusPublished - 2000
EventInternational Microprocesses and Nanotechnology Conference, MNC 2000 - Tokyo, Japan
Duration: 2000 Jul 112000 Jul 13

Publication series

NameDigest of Papers - 2000 International Microprocesses and Nanotechnology Conference, MNC 2000


ConferenceInternational Microprocesses and Nanotechnology Conference, MNC 2000


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