Abstract
Concentration depth profiles of both carrier and electron traps shallower than EL2 are investigated for undoped liquid-encapsulated Czochralski GaAs single crystals after annealing in vacuum and ambient arsenic vapor pressure with As metal powders. Thermal conversion near the surface of semi-insulating GaAs annealed in vacuum at 900ºC is suppressed by annealing with ambient arsenic pressure of 100 Torr. The carrier concentration depth profile of thermally converted GaAs, which is an initially semi-insulating substrate, depends not only on the concentration change of EL2 but also on that of native shallow acceptors and deep donors shallower than EL2.
| Original language | English |
|---|---|
| Pages (from-to) | 1750-1755 |
| Number of pages | 6 |
| Journal | Japanese Journal of Applied Physics |
| Volume | 28 |
| Issue number | 10 R |
| DOIs | |
| Publication status | Published - 1989 Oct |
Keywords
- Deep donors
- El2 out-diffusion
- Electron traps
- Leg GaAs, thermal conversion