Abstract
Hydrogen desorption kinetics from Si(100)-2×1:H has been systematically investigated using temperature-programmed desorption (TPD) on several hydrogenating gases and thermal conditions. As a result, the desorption kinetic order with the hydrogen coverage was found to increase in the order: atomic hydrogen<disilane<silane and room-temperature adsorption<high-temperature adsorption<post-annealing. These variations in kinetic order, depicted as a TPD peak shift at low hydrogen coverages, are universally described with a single surface parameter, γ0, the fractional coverage of unpaired hydrogen atoms. Fitting with obtained TPD spectra demonstrates that γ0 is a delicate function of the hydrogenating gas and thermal history.
Original language | English |
---|---|
Pages (from-to) | 177-185 |
Number of pages | 9 |
Journal | Surface Science |
Volume | 465 |
Issue number | 1-2 |
DOIs | |
Publication status | Published - 2000 Oct 10 |
Externally published | Yes |
ASJC Scopus subject areas
- Condensed Matter Physics
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Materials Chemistry