Role of irradiation-induced defects on SiC dissolution in hot water

Sosuke Kondo; Shinichiro Mouri; Yoshihiro Hyodo; Tatsuya Hinoki; Fumihisa Kano

doi:10.1016/j.corsci.2016.08.007

Role of irradiation-induced defects on SiC dissolution in hot water

Sosuke Kondo, Shinichiro Mouri, Yoshihiro Hyodo, Tatsuya Hinoki, Fumihisa Kano

IMR - Materials Design Division

Research output: Contribution to journal › Article › peer-review

35 Citations (Scopus)

Abstract

An enhancement of the dissolution of high-purity 3C-SiC in hot water (320 °C, 20 MPa: relevant to the light-water reactor coolant condition) is demonstrated after 5.1 MeV Si-ion irradiation. Optical spectrometry and Kelvin force microscopy revealed the creation of interband-defect localized states within the bandgap. The dissolution rate was found to be dependent on the irradiation fluence, irradiation-induced volume expansion, and the photoluminescence quenching. An annealing study showed prevention of irradiation-enhanced dissolution with the recovery of most defects. These results show that the dissolution rates of irradiated SiC are increased with the population of irradiation-induced defects.

Original language	English
Pages (from-to)	402-407
Number of pages	6
Journal	Corrosion Science
Volume	112
DOIs	https://doi.org/10.1016/j.corsci.2016.08.007
Publication status	Published - 2016 Nov 1

Keywords

A. Ceramic
B. Ion implantation
B. SEM
C. High temperature corrosion
C. Reactor conditions

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10.1016/j.corsci.2016.08.007

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title = "Role of irradiation-induced defects on SiC dissolution in hot water",

abstract = "An enhancement of the dissolution of high-purity 3C-SiC in hot water (320 °C, 20 MPa: relevant to the light-water reactor coolant condition) is demonstrated after 5.1 MeV Si-ion irradiation. Optical spectrometry and Kelvin force microscopy revealed the creation of interband-defect localized states within the bandgap. The dissolution rate was found to be dependent on the irradiation fluence, irradiation-induced volume expansion, and the photoluminescence quenching. An annealing study showed prevention of irradiation-enhanced dissolution with the recovery of most defects. These results show that the dissolution rates of irradiated SiC are increased with the population of irradiation-induced defects.",

keywords = "A. Ceramic, B. Ion implantation, B. SEM, C. High temperature corrosion, C. Reactor conditions",

author = "Sosuke Kondo and Shinichiro Mouri and Yoshihiro Hyodo and Tatsuya Hinoki and Fumihisa Kano",

note = "Funding Information: This work was performed under contract with Toshiba Corporation in “Research and Development of Innovative Technologies for Nuclear Reactor Core Material with Enhanced Safety” entrusted to Toshiba by the Ministry of Education, Culture, Sports, Science and Technology of Japan (MEXT). Publisher Copyright: {\textcopyright} 2016 Elsevier Ltd",

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doi = "10.1016/j.corsci.2016.08.007",

language = "English",

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journal = "Corrosion Science",

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T1 - Role of irradiation-induced defects on SiC dissolution in hot water

AU - Kondo, Sosuke

AU - Mouri, Shinichiro

AU - Hyodo, Yoshihiro

AU - Hinoki, Tatsuya

AU - Kano, Fumihisa

N1 - Funding Information: This work was performed under contract with Toshiba Corporation in “Research and Development of Innovative Technologies for Nuclear Reactor Core Material with Enhanced Safety” entrusted to Toshiba by the Ministry of Education, Culture, Sports, Science and Technology of Japan (MEXT). Publisher Copyright: © 2016 Elsevier Ltd

PY - 2016/11/1

Y1 - 2016/11/1

N2 - An enhancement of the dissolution of high-purity 3C-SiC in hot water (320 °C, 20 MPa: relevant to the light-water reactor coolant condition) is demonstrated after 5.1 MeV Si-ion irradiation. Optical spectrometry and Kelvin force microscopy revealed the creation of interband-defect localized states within the bandgap. The dissolution rate was found to be dependent on the irradiation fluence, irradiation-induced volume expansion, and the photoluminescence quenching. An annealing study showed prevention of irradiation-enhanced dissolution with the recovery of most defects. These results show that the dissolution rates of irradiated SiC are increased with the population of irradiation-induced defects.

AB - An enhancement of the dissolution of high-purity 3C-SiC in hot water (320 °C, 20 MPa: relevant to the light-water reactor coolant condition) is demonstrated after 5.1 MeV Si-ion irradiation. Optical spectrometry and Kelvin force microscopy revealed the creation of interband-defect localized states within the bandgap. The dissolution rate was found to be dependent on the irradiation fluence, irradiation-induced volume expansion, and the photoluminescence quenching. An annealing study showed prevention of irradiation-enhanced dissolution with the recovery of most defects. These results show that the dissolution rates of irradiated SiC are increased with the population of irradiation-induced defects.

KW - A. Ceramic

KW - B. Ion implantation

KW - B. SEM

KW - C. High temperature corrosion

KW - C. Reactor conditions

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SN - 0010-938X

VL - 112

SP - 402

EP - 407

JO - Corrosion Science

JF - Corrosion Science

ER -

Role of irradiation-induced defects on SiC dissolution in hot water

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Keywords

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