Room-temperature bonding of AlN ceramic and Si semiconductor substrates for improved thermal management

Takashi Matsumae, Yuichi Kurashima, Hideki Takagi, Kazunori Nishizono, Tsutomu Amano, Eiji Higurashi

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

5 Citations (Scopus)

Abstract

An AlN ceramic substrate was bonded with a Si substrate by using a surface activated bonding method for advanced thermal management. When the sputtered surfaces were directly bonded, the bonding strength was ~1 J/m2. However, when the bonding process was modified to provide a Si adhesion layer with a thickness of 1.5 nm on the AlN surface, the adhesion strength become equivalent to 2.5 J/m2. As a device substrate can be integrated on the heat dissipation broad consisting of AlN through atomically thin bonding layer, the proposed bonding technique would facilitate efficient cooling system for future high power electronic devices.

Original languageEnglish
Title of host publication2021 International Conference on Electronics Packaging, ICEP 2021
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages65-66
Number of pages2
ISBN (Electronic)9784991191114
DOIs
Publication statusPublished - 2021 May 12
Event20th International Conference on Electronics Packaging, ICEP 2021 - Tokyo, Japan
Duration: 2021 May 122021 May 14

Publication series

Name2021 International Conference on Electronics Packaging, ICEP 2021

Conference

Conference20th International Conference on Electronics Packaging, ICEP 2021
Country/TerritoryJapan
CityTokyo
Period21/5/1221/5/14

Keywords

  • AlN ceramic
  • Heat spreader
  • Surface activated bonding
  • Thermal management

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