Room temperature bonding of aluminum nitride ceramic and semiconductor substrate

Takashi Matsumae, Yuichi Kurashima, Eiji Higurashi, Kazunori Nishizono, Tsutomu Amano, Hideki Takagi

Research output: Contribution to journalArticlepeer-review

10 Citations (Scopus)


AlN and Si substrates were bonded at room temperature after sputtering the surfaces under ultra-high vacuum conditions. The bonding strength was insignificant when they were directly bonded. However, the strong bonding equivalent to the Si bulk strength (2.5 J/m2) was achieved by a process modification to form a 1.5-nm-thick Si adhesion layer on the AlN substrate. When the Au/Ti bonding layers were deposited on the surfaces before bonding, such strong bonding was also obtained. As the bonding layers were atomically thin, we expect that the thermal resistance between the substrates is limited compared with other integration techniques.

Original languageEnglish
Pages (from-to)25956-25963
Number of pages8
JournalCeramics International
Issue number16
Publication statusPublished - 2020 Nov
Externally publishedYes


  • Aluminum nitride
  • Room temperature bonding
  • Silicon-on-AlN
  • Surface activated bonding

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • Process Chemistry and Technology
  • Surfaces, Coatings and Films
  • Materials Chemistry


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