Room-temperature bonding of GaN to Al using Ar-Beam surface activation

Eiji Higurashi, Akihiro Kaneko, Masatake Akaike, Tadatomo Suga

Research output: Contribution to journalArticlepeer-review


As-grown n-type GaN has been bonded successfully to polycrystalline Al by surface activated bonding in an ultrahigh vacuum at room temperature. The microstructure, bonding strength, and electrical characteristics of the bonded GaN/Al interface have been investigated using transmission electron microscopy (TEM), tensile strength testing, and current-voltage (I-V) measurements. For producing active surfaces,argon-fast atom beam sputteringsource (acceleration voltage: 1.5 kV, current: 15 mA) was used. The TEM study showed thata nearly continuous amorphous thin interlayer composed of mainly Al with a thickness ofabout 10 nm was observed at the bonded interface. The tensile strength of GaN/Al samples was in the range of 14-19 MPa. The results of I-Vmeasurements showed that the n- GaN/Al interface without thermal annealing was rectifying and became ohmic after thermal annealing in N2gas ambient at 600°C.

Original languageEnglish
Pages (from-to)369-372
Number of pages4
JournalIEEJ Transactions on Sensors and Micromachines
Issue number8
Publication statusPublished - 2010
Externally publishedYes


  • GaN
  • Heterogeneous integration
  • Metal contacts
  • Room-temperature bonding

ASJC Scopus subject areas

  • Mechanical Engineering
  • Electrical and Electronic Engineering


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