TY - JOUR
T1 - Room-temperature bonding of vertical-cavity surface-emitting laser chips on Si substrates using Au microbumps in ambient air
AU - Takigawa, Ryo
AU - Higurashi, Eiji
AU - Suga, Tadatomo
AU - Sawada, Renshi
PY - 2008/11
Y1 - 2008/11
N2 - The feasibility of room-temperature (RT) bonding of vertical-cavity surface-emitting laser (VCSEL) chips on silicon (Si) substrates with Au microbumps was demonstrated by Au-Au surface-activated bonding. The diameter at the top, the height, and the pitch of Au microbumps measured approximately 5, 2, and 10μm, respectively. Following activation of the Au surfaces with argon radio-frequency plasma, Au-Au bonding was carried out using contact at RT in ambient air. The measured results of light-current-voltage (L-I-V) characteristics indicated no significant degradation of the VCSEL chips after bonding.
AB - The feasibility of room-temperature (RT) bonding of vertical-cavity surface-emitting laser (VCSEL) chips on silicon (Si) substrates with Au microbumps was demonstrated by Au-Au surface-activated bonding. The diameter at the top, the height, and the pitch of Au microbumps measured approximately 5, 2, and 10μm, respectively. Following activation of the Au surfaces with argon radio-frequency plasma, Au-Au bonding was carried out using contact at RT in ambient air. The measured results of light-current-voltage (L-I-V) characteristics indicated no significant degradation of the VCSEL chips after bonding.
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U2 - 10.1143/APEX.1.112201
DO - 10.1143/APEX.1.112201
M3 - Article
AN - SCOPUS:57649104471
SN - 1882-0778
VL - 1
SP - 1122011
EP - 1122012
JO - Applied Physics Express
JF - Applied Physics Express
IS - 11
ER -