Abstract
Hydrogen plasma cleaning was applied for ZnSe homoepitaxial growth along with a novel wet etching technique for ZnSe substrates. The dependencies of etch-pit density (EPD) on RF power and cleaning temperature were investigated; for RF power below 250 W, the EPD is suppressed to about 1 × 105/cm2, and the optimum temperature range is between 260 and 280°C. The EPD of ZnSe film grown on ZnSe substrate cleaned at 260°C and 220 W for 20 min is 2.7 × 104/cm2. SCH II-VI laser diodes (LDs) containing ZnMgSSe cladding layers were fabricated on semi-insulating ZnSe substrates cleaned under the optimum conditions. LDs with HR coating on both facets demonstrate CW oscillation at room temperature. Typical threshold current and wavelength are 84 mA and 517 nm, respectively.
| Original language | English |
|---|---|
| Pages (from-to) | 550-553 |
| Number of pages | 4 |
| Journal | Journal of Crystal Growth |
| Volume | 184-185 |
| Publication status | Published - 1998 Jan 1 |
| Externally published | Yes |
Keywords
- Homoepitaxy
- Laser diode
- Plasma cleaning
- ZnSe
ASJC Scopus subject areas
- Condensed Matter Physics
- Inorganic Chemistry
- Materials Chemistry