Room-temperature edge functionalization and doping of graphene by mild plasma

Toshiaki Kato; Liying Jiao; Xinran Wang; Hailiang Wang; Xiaolin Li; Li Zhang; Rikizo Hatakeyama; Hongjie Dai

doi:10.1002/smll.201002146

Room-temperature edge functionalization and doping of graphene by mild plasma

Toshiaki Kato, Liying Jiao, Xinran Wang, Hailiang Wang, Xiaolin Li, Li Zhang, Rikizo Hatakeyama, Hongjie Dai

ENG - Electronic Engineering

Research output: Contribution to journal › Article › peer-review

56 Citations (Scopus)

Abstract

A direct correlation between carrier doping and selective edge functionalization is revealed for graphene treated with a mild NH₃ plasma. Raman mapping analysis shows that the D-peak near the edge of the graphene sheet selectively increases after plasma treatment. Electrical measurements show that the Dirac point position of a graphene nanoribbon device shifts toward a negative gate-bias voltage.

Original language	English
Pages (from-to)	574-577
Number of pages	4
Journal	Small
Volume	7
Issue number	5
DOIs	https://doi.org/10.1002/smll.201002146
Publication status	Published - 2011 Mar 7

Keywords

doping
edge functionalization
graphene
nanoribbons
plasma

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10.1002/smll.201002146

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AU - Kato, Toshiaki

AU - Jiao, Liying

AU - Wang, Xinran

AU - Wang, Hailiang

AU - Li, Xiaolin

AU - Zhang, Li

AU - Hatakeyama, Rikizo

AU - Dai, Hongjie

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KW - edge functionalization

KW - graphene

KW - nanoribbons

KW - plasma

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Room-temperature edge functionalization and doping of graphene by mild plasma

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Keywords

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