Room-temperature edge functionalization and doping of graphene by mild plasma

Toshiaki Kato, Liying Jiao, Xinran Wang, Hailiang Wang, Xiaolin Li, Li Zhang, Rikizo Hatakeyama, Hongjie Dai

Research output: Contribution to journalArticlepeer-review

56 Citations (Scopus)


A direct correlation between carrier doping and selective edge functionalization is revealed for graphene treated with a mild NH3 plasma. Raman mapping analysis shows that the D-peak near the edge of the graphene sheet selectively increases after plasma treatment. Electrical measurements show that the Dirac point position of a graphene nanoribbon device shifts toward a negative gate-bias voltage.

Original languageEnglish
Pages (from-to)574-577
Number of pages4
Issue number5
Publication statusPublished - 2011 Mar 7


  • doping
  • edge functionalization
  • graphene
  • nanoribbons
  • plasma


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